Abstract:Copper has been recognized as a more suitable interconnects material than aluminum because of its low electrical resistivity and excellent electromigration resistance. Nowadays, inter connect copper is realized by electroplating (ECP). and the ECP process consists of three steps: copper plating, edge bevel removal (EBR) and copper anneal. EBR is a process that using sulfuric acid and hydrogen peroxide to remove the edge and back side metal layer. In the 55nm tech node, EBR width in top metal layer ECP is key to the chip manufacturing, since wider EBR may not only affect the yield of chips located in wafer edge, but also lead to wafer ID miss-auto read issue. Generally, EBR consists of two steps of acid clean, the effectiveness is determined by the step 11 etchant volume, etchant flow rate, wafer rotating speed and the step 2 etchant volume, etchant flow rate, wafer rotating speed. In this paper, we studied the relationship of the mean value, standard deviation (STD) of EBR width and the parameters mentioned above. By modifying the etchant volume, etchant flow rate, wafer rotating speed of the two steps. there are total 16 split conditions in this paper. From the study, we get the conclusion that increasing step 1 and step 2 wafer rotating speeds will decrease the EBR width, which could protect wafer ID from damaging by EBR and improve wafer edge chip yield, thus improve the process reliability of top metal layer ECP.

Study Charge Effect in Dual Damascenes Etch Process of 0.13 μm Cu-line Technology

Study of the Formation of Copper Void Defect and Process Optimization For Reduction In Dual Damascene Process

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections

Modeling and Optimization of Process Parameters of a DF-CCP Etcher Chamber

Top Metal Layer Electro Plating Edge Bevel Removal Improvement Study

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Methods of Reducing Metal Damager Defect in Back End of Line for Semiconductor in 28nm Technology

Study on Wafer De-Chuck for High Aspect Ratio Etch Process

Study on the defect of copper CMP

Optimized Work Function Metal Layer Damage Effect in Metal Gate BARC Etch Process by ICP Etch System

Elimination the CMP Defects for TSV Process by Optimizing the Copper Electrodeposition

Method to Improve the Process Efficiency for Copper Pillar Electroplating

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Development of a Plasma Etching Process of Copper for the Microfabrication of High-Density Interconnects in Advanced Packaging

28nm Metal Hard Mask etch process development

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Study on the dishing of copper in CMP