Abstract:Wafer-level copper electroplating is an indispensable process in advanced packaging for manufacturing redistribution layers (RDL), micro-bumps, through silicon vias (TSV), etc., where coplanarity is a significant indicator to evaluates whether the plating thickness is uniform among different sized patterns and at different positions. Achieved through precise control of the electric field distribution, a good coplanarity can lower the reliability risks, for example, interfacial voiding or interlayer mismatch, to improve the product yield. However, with developments of greater wafer size and finer interconnect structure, higher demands are set on the material properties. Nanotwinned copper (nt-Cu) is of high-density and highly (111)-oriented coherent twin boundaries and exhibiting enhanced mechanical and electrical performances. In the present study, nt-Cu based electroplating for 8-inch RDL patterned wafer in wafer level packaging (WLP) is conducted with a proprietary plating bath on a horizontal electroplating system. Equipment setting/parameter effects such as shielding plates, circulating flow rate, and wafer spin rate are analyzed on coplanarity performance of nt-Cu. The results indicate nt-Cu microstructure can be formed throughout the wafer and the coplanarity indexed by within-die (WID) nonuniformity is manipulated below the technical threshold < 8%, which is repeatable in an 8 out of 30 random checks. This engineering research offers a pioneer practice for industrial application of nt-Cu electroplating technique.

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Study of the Formation of Copper Void Defect and Process Optimization For Reduction In Dual Damascene Process

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

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Wafer Edge Process Integration and Defect Inspection with the Immersion Lithography Process

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Elimination the CMP Defects for TSV Process by Optimizing the Copper Electrodeposition

Plating Uniformity of Bottom-Up Copper Pillars and Patterns for Ic Substrates with Additive-Assisted Electrodeposition

8-inch wafer-level electroplating of nanotwinned copper redistribution layer for advanced packaging

Edge Effects of an Eddy-Current Thickness Sensor During Chemical Mechanical Polishing

The Study on the Shaping of Electroplated Copper Pillar Bumping

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Effects of Pattern Characteristics on the Copper Electroplating Process

Impact of Line Edge Roughness on Copper Interconnects