Abstract:Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device technologies with specially engineered properties are under intense investigation to revolutionize information processing with brain-inspired computing primitives for ultra energy-efficient implementation of AI and machine learning tasks. Ferroelectric memories with ultra-low power and fast operation, non-volatile data retention and reliable switching to multiple polarization states promises one such option for non-volatile memory and synaptic weight elements in neuromorphic hardware. For quick adaptation of industry, new materials need complementary metal oxide semiconductor (CMOS) process compatibility which brings a whole new set of challenges and opportunities for advanced materials design. In this work, we report on designing of back-end-of-line compatible ferroelectric Hf0.5Zr0.5O2 capacitors that are capable of recovery from fatigue multiple times reaching 2Pr > 40 microC cm-2 upon each retrieval. Our results indicate that with specifically engineered material stack and annealing protocols, it is possible to reach endurance exceeding 10^9 cycles at room temperature that can lead to ultralow power ferroelectric non-volatile memory components or synaptic weight elements compatible with online training or inference tasks for neuromorphic computing.

A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

A Fully Logic CMOS Compatible Non-Volatile Memory for Low Power IoT Applications

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

A Low Power 4T2C Nvsram with Dynamic Current Compensation Operation Scheme

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Challenges and Recent Advances in HfO2-based Ferroelectric Films for Non-Volatile Memory Applications

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A 130-Nm Ferroelectric Nonvolatile System-on-Chip with Direct Peripheral Restore Architecture for Transient Computing System

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

A ferroelectric fin diode for robust non-volatile memory

Nonvolatile Memory Design Based on Ferroelectric FETs.

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware

HfO 2 -based Junctionless FeFET Array on FDSOI Platform for NAND Memory Application