Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

A Fully Logic CMOS Compatible Non-Volatile Memory for Low Power IoT Applications

Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

A Pure Logic Cmos Based Low Power Non-Volatile Random Access Memory For Rfid Application

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application

A Low-Power, Single-Poly, Non-Volatile Memory for Passive RFID Tags

A 462gops/j RRAM-based Nonvolatile Intelligent Processor for Energy Harvesting IoE System Featuring Nonvolatile Logics and Processing-in-memory

A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications

A Novel 2 T P-Channel Nano- Crystal Memory for Low Power/High Speed Embedded Nvm Applications

A SOI Based Dopant-Free MOSFET for Logic and Memory Application

Design Of Almost-Nonvolatile Embedded Dram Using Nanoelectromechanical Relay Devices

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Low Power Computing Using STT-MRAM

A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

Logic-in-memory based on an atomically thin semiconductor

A 130-Nm Ferroelectric Nonvolatile System-on-Chip with Direct Peripheral Restore Architecture for Transient Computing System

Ge-based non-volatile memories

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing