Abstract:One convenient approach to minimize the surface recombination loss in Si is to passivate the surface dangling bonds by depositing a thin TiO 2 layer on the bulk Si. Besides, the p -Si/TiO 2 interface can initiate hole-blocking and facilitate efficient electron transport through the TiO 2 layer; thereby, promoting the extraction of electrons for efficient onward utilization. In this context, the current investigation involves studying how the Ti 3+ donor states, produced by deliberately introducing O-vacancies controlled by changing the plasma pressure in the RF-magnetron sputtering chamber during the growth of the TiO 2 thin films, can change the material's Fermi level and work function and modify the band bending and band offset as well as the fixed oxide charge density in the p -Si/TiO 2 heterojunction interface. The TiO 2 / p -Si interface has been studied through capacitance-voltage (C-V) analysis to determine the interface parameters such as fixed oxide charge, the density of interface traps, and the dielectric constant of TiO 2 . The studied hole-blocking property of the interface has been correlated to the photoresponsivity of the metal-oxide-semiconductor (MOS) structure. The MOS device fabricated at a pressure of 30 mTorr displays a large saturation current (15.95 μA cm –2 ) when subjected to a positive gate bias, facilitated by the relatively low conduction band offset (ΔE C ∼0.20 eV), significant positive fixed oxide charge (+1.18 ×10 11 cm –2 ) and the interface trap density (1.03 ×10 12 cm –2 ), which enhanced the transport of minority carrier electrons from the p -Si to the metal, resulting in a good photo responsivity ∼0.158 AW –1 and photo gain of ∼37.5 under white light illumination. Optimum hole-blocking and surface passivation characteristics of the TiO 2 / p -Si interface together may facilitate fabricating improved heterojunction Si solar cells.

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