Scalable Layer‐Controlled Oxidation of Bi2O2Se for Self‐Rectifying Memristor Arrays With sub‐pA Sneak Currents
Yingjie Zhao,Zhefeng Lou,Jiaming Hu,Zishun Li,Lanxin Xu,Zhe Chen,Zhuokai Xu,Tao Wang,Mengqi Wu,Haoting Ying,Minghao An,Wenbin Li,Xiao Lin,Xiaorui Zheng
DOI: https://doi.org/10.1002/adma.202406608
IF: 29.4
2024-09-11
Advanced Materials
Abstract:Achieving controllable oxidation of single‐crystal Bi2O2Se through the development of large‐scale UV‐assisted intercalative oxidation allowed for the construction of β‐Bi2SeO5/Bi2O2Se heterostructures. The β‐Bi2SeO5/Bi2O2Se memristor exhibited remarkable self‐rectifying memristive performance, including ultra‐high ON/OFF and rectification ratios, and nonlinearity. The scalable production of self‐rectifying memristor arrays is successfully demonstrated, showcasing sub‐pA sneak currents, desirable to minimize cross‐talk effects in high‐density memristor arrays. Smart memristors with innovative properties are crucial for the advancement of next‐generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large‐scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi‐free‐standing Bi2O2Se single‐crystalline film and achieves layer‐controlled oxidation by developing large‐scale UV‐assisted intercalative oxidation, resulting β‐Bi2SeO5/Bi2O2Se heterostructures. The resulting β‐Bi2SeO5/Bi2O2Se memristor demonstrates remarkable self‐rectifying resistive switching performance (over 105 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self‐rectifying β‐Bi2SeO5/Bi2O2Se memristor, achieving sub‐pA sneak currents to minimize cross‐talk effects in high‐density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub‐100 ns) and low power consumption (1.2 pJ) as characterized by pulse‐mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self‐rectifying switching mechanism, elucidated through controllable β‐Bi2SeO5 thickness modulation and theoretical ab initio calculations.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology