Abstract:Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) surfaces; Ag heteroepitaxy on lattice-matched substrates including NiAl(110), NiAl(100), and Fe(100); and Ag heteroepitaxy on 5-fold icosohedral Al-Pd-Mn and 2-fold decagonal Al-Cu-Co quasicrystalline surfaces.

Sputtering based epitaxial growth and modeling of Cu/Si thin films

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation

Thin Film growth of Solid State materials

Monte Carlo Simulation of Cu Thin Films Growth Process

Simulation of Complete Film Growth Process by Magnetron Sputtering

Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

The Growth Mechanism of Copper Films Coated on Cenosphere Particles Using Magnetron Sputtering Method

The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation

Impact of the thickness on the optical and electronic and structural properties of sputtered Cu2S thin films

Modelling of an obliquely deposited thin film in three dimensions by kinetic Monte Carlo method

Molecular Dynamics Simulation of Deposition and Growth of Cu Thin Film on Si Substrate

The role of sputtered atom and ion energy distribution in films deposited by Physical Vapor Deposition: A molecular dynamics approach

AFM INVESTIGATIONS OF GROWTH OF Cu THIN FILMS DEPOSITED ON SILICON WAFERS

Surface Morphology And Interface Reaction Of Cu/Sio2/Si (111) Systems Prepared By Radio Frequency Magnetron Sputtering

A stochastic model of solid state thin film deposition: application to chalcopyrite growth

On the Pressure Effect in Energetic Deposition of Cu Thin Films by Modulated Pulsed Power Magnetron Sputtering: A Global Plasma Model and Experiments

Copper Thin Film Deposition by An Indigenous Unbalanced Type DC Magnetron Sputtering System

Molecular dynamics simulation of Ni/Cu epitaxial thin film growth

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling