Epitaxial Growth of Differently Doped (caxla1−x)(ba1.75−xla0.25+x)cu3oythin Films Byin Situdc Magnetron Sputtering

Y. Z. Zhang,H. Q. Luo,M. Zu,L. Fang,H. H. Wen
DOI: https://doi.org/10.1088/0953-2048/20/5/011
2007-01-01
Superconductor Science and Technology
Abstract:We epitaxially deposited a series of differently doped (CaxLa1-x)(Ba-1.75-La-x(0.25+x)) Cu3Oy thin films by in situ dc magnetron sputtering. Samples with x = 0.1 and 0.5 were prepared. The sputtering condition, annealling processes, and cooling methods were carefully studied. A quenching method has been developed. By using this method, a series of differently doped samples were routinely obtained. The structures of the thin films were studied by x-ray diffraction with theta-2 theta, rocking curve, and Phi scans. The surface morphologies of the thin films were analysed by atomic force microscopy. The study shows that the thin films are highly c-axis oriented and constructed from three-dimensional stacking islands.
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