Abstract:Understanding the role of alkylamine surfactants in the anisotropic growth mechanism of copper nanowires (CuNWs) in solution-phase synthesis has implications for tuning of the properties that can be employed in diverse, important applications. In this paper, we used molecular dynamics simulations to show that the hexadecylamine (HDA) adsorption structure can, depending on the HDA density, form a surfactant monolayer or many stacked layers parallel to the copper surface. We showed that the layers are similar on the Cu(111) and Cu(100) facets, independent of the HDA density, and that the presence of Cl– ions appears to have no significant effect on the HDA/HDA+ stacked layer structure. Within the simulation time frame, Cl– ions do not pass through a regular, uniform HDA monolayer, but they can pass through a monolayer with some protonated HDA molecules (HDA+). Our results suggest that Cl– ions not only affect the HDA/HDA+ monolayer stability in CuNW synthesis, causing a disruption of the monolayer and formation of the stacked layer, but also participate in copper(II) alkylamine complex formation. Moreover, our results stress the importance of a reliable model of the surfactant layer on the metal particle, explicitly considering the protonation of part of the surfactant. Our results show a completely innovative perspective of the HDA adsorption structure and its role in the growth mechanism of CuNWs in solution-phase synthesis, allowing improvements in control of the properties and the quality of the CuNWs obtained.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c00708?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c00708</a>.Density profiles of HDA and water molecules for HDA adsorption at higher and lower densities on the Cu(111) surface, of HDA for adsorption at lower densities on the Au(100) surface, of water and Cl– on the Cu(111) surface at a lower HDA/HDA+ density on Cu(111), and of water and HDA/HDA+ at higher densities on the Cu(100) and Cu(111) surfaces and a minimum distance between the Cl– ions that penetrate the monolayer on the Cu(111) surface and analyses of the potential, kinetic, and total energies as a function of time and of interaction energies involving chosen molecules throughout the simulation (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c00708/suppl_file/an0c00708_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

Atomistic Numerical Investigation of Single-crystal Copper Nanowire with Surface Defects

Advanced Numerical Characterization of Mono-Crystalline Copper with Defects

Molecular Dynamics Simulation of Energetic Cu55 Clusters Deposition on a Fe (0 0 1) Surface

Molecular dynamics simulations and analyzation of Cu deposited on stainless steel substrate surfaces

A Molecular Dynamics Study of Carbon Dimerization on Cu(111) Surface with Optimized DFTB Parameters

Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate

Effects of deposition dynamics on epitaxial growth

Simulation of the Diffusion of Copper Atom on Graphene by Molecular Dynamics

Epitaxial growth of Cu on Cu(001): experiments and simulations

Molecular Dynamics Simulations of the Structural Arrangement and Density of Alkylamine Surfactants on Copper Surfaces: Implications for Anisotropic Growth of Copper Nanowires

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Elucidation of Cu–Zn Surface Alloying on Cu(997) by Machine-Learning Molecular Dynamics

Surface Roughness Analysis of Cu Films Deposited on Si Substrates: A Molecular Dynamic Analysis

Growth and Interfacial Interaction of Cu on ZrO2(111) Thin Film

The Growth Mechanism of Co Atoms on Cu Substrates

Misfit Dislocations And Adatom Domain Competitions In Cu/Ni (1(1)Over-Bar(1)Over-Bar) Heteroepitaxial Growth

Misfit Dislocations and Adatom Domain Competitions in Cu/Ni (11¯1¯) Heteroepitaxial Growth

The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation

Surface roughness analysis of Cu seed layer deposited on α-Ti diffusion barrier layer: A molecular dynamics simulation study

Misfit dislocations and adatom domain competitions in Cu/Ni (1 1¯ 1¯) heteroepitaxial growth