Abstract:Chemical vapor deposition (CVD) is an essential method of depositing and fabricating large-area and high-quality graphene. In this work, molecular dynamics (MD) simulation technology is adopted to simulate the fabrication of graphene on the copper (111) crystal surface by chemical vapor deposition method. In order to eliminate the adverse effects of traditional MD method, an adapted potential system between carbon and copper atoms is introduced into the modeling of deposition and growth simulation of graphene. The results reveal the microscale growth mechanism of the graphene depositing on Cu(111) crystal surfaces, and the influence of temperature and carbon deposition rate (CDR) on the quality of graphene. The simulation results indicate that the deposition and growth of graphene consists of two stages. The first stage is to form binary carbons, trinary carbons and carbon chains. The second stage is to form carbon rings and the defects healing. The research results also reveal that high temperature can provide the carbon atoms with sufficient energy, which can help the carbon atoms to skip the energetic barrier between the two stages, and then achieve the deposition and growth of graphene. Moreover, the influence of temperature and carbon deposition rate are investigated in detail. The temperature mainly affects the defects and the flatness of graphene. The defects of graphene are the least and the surface can become the flattest at a deposition temperature of 1300 K. Higher temperature can cause the carbon atoms to irregularly move, and lower temperature can suppress the catalysis of the copper substrate. Both the higher and lower temperature can degrade the quality of the graphene surface. The CDR can influence the defects of graphene in growth. The lower value of CDR can lead to local growth on the graphene surface because of the lower nucleation density while the higher CDR is also able to cause the defects to form because of the uneven free energy distribution on the copper surface that has thermal fluctuation. It is shown that graphene can present the flattest surface when the value of CDR is set to be 5 ps–1. According to the simulation process of deposition, it validates that the bi-layer and multi-layer graphene may grow based on the deposition of original single layer of graphene. As to the deposition and growth practice, it is suggested that the temperature 1300K should be suitable for the graphene CVD process of Cu(111) surface. The results in this work can provide a reference for understanding and implementing the fabrication of graphene on the Cu substrate by CVD methods.

Simulation of the Diffusion of Copper Atom on Graphene by Molecular Dynamics

Diffusion of CO2 in Large Crystals of Cu-BTC MOF.

Theoretical Insights into the Thermodynamics and Kinetics of Graphene Growth on Copper Surfaces

Deposition and Growth Mechanism of Graphene on Copper Crystal Surface Based on Molecular Dynamics Simulation

Molecular dynamics simulation of graphene on Cu(111) with different Lennard-Jones parameters

Density Functional Theory and Molecular Dynamics Study on the Growth of Graphene by Chemical Vapor Deposition on Copper Substrate

Investigation Of Electrically Induced Migration Of Copper On Graphene Surfaces: Theory And Experiments

Molecular Dynamics Simulation of Gd Adatom Diffusion on Cu Low Index Surfaces

Molecular Dynamics Simulation of Gd Adatom Diffusion on Cu(110) Surface

A Molecular Dynamics Study of Carbon Dimerization on Cu(111) Surface with Optimized DFTB Parameters

Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate

Room-temperature diffusion of metal clusters on graphene

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

Multiscale Theoretical Studies of Graphene Growth on Copper Surfaces

Atomic Level Insight into Wetting and Structure of Ag Droplet on Graphene Coated Copper Substrate—Molecular Dynamics versus Experiment

Theoretical Investigation of Carbon Atom Adsorption and Diffusion on the Surfaces of Cu

Thermal Transport in Graphene Supported on Copper

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

An Important Atomic Process in the CVD Growth of Graphene: Sinking and Up-Floating of Carbon Atom on Copper Surface

Diffusion of Cu adatoms and dimers on Cu(111) and Ag(111) surfaces

First-Principles Thermodynamics of Graphene Growth on Cu Surfaces