Molecular Dynamics Simulation of Gd Adatom Diffusion on Cu Low Index Surfaces

Xie Guofeng,Chen Nanxian
DOI: https://doi.org/10.3969/j.issn.1672-7126.2006.06.005
2006-01-01
Abstract:The diffusion mechanisms of Gd adatoms on Cu low index surfaces are studied by molecular dynamics.The simulation results show that on Cu(001) and Cu(111) surfaces,the Gd adatoms diffuse by hopping,and the frequency of long jumps is very high at high temperature.On Cu(110) surface,along direction the Gd adatoms diffuse by hopping,and the frequency of long jumps is also high,while along direction,the Gd adatoms diffuse by exchanging.The diffusion coefficient or frequency of hopping and exchanging can be described by Arrhenius equation.The diffusion barriers on Cu(001) and Cu(111) surfaces are calculated to be 0.19 eV and 0.013 eV,respectively.While on Cu(110) surface,the hopping diffusion barrier along direction is 0.097 eV,and the exchanging diffusion barrier along direction is 0.33eV.
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