Abstract:A successful hexagonal Cu2S p-type semiconductor thin film using DC magnetron sputtering is reported. Films with thickness gradients were deposited by taking advantage of deposition geometry and target dimensions. X-ray diffraction (XRD) analysis confirmed the exclusive formation of the hexagonal Cu2S phase. Elemental composition and thickness dependence with the sample position were determined using energy-dispersive x-ray spectroscopy. Optical properties, including the optical bandgap, refractive index, and extinction coefficient, were assessed by modeling transmittance spectra. The Tauc–Lorentz oscillator and Drude models were employed for this purpose. XRD data analysis successfully determined the film thickness (tXRD) as a function of the sample position, aligning well with thickness values (tT) derived from transmittance spectra analyses. These results were further supported by film thickness values (tSEM) obtained from cross-sectional SEM images. Charge carrier density and mobility, extracted from the optical models, were found to be consistent with DC electrical measurements. AC impedance curves were effectively modeled with RL–RC parallel circuits. The results indicate that the inductance (L) and capacitance (C) components of the films increase with decreasing film thickness.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of the thickness of sputter - deposited Cu₂S thin films on optical, electronic and structural properties. Specifically, the authors obtained Cu₂S thin films with different thickness gradients by changing the sample position, and used a variety of characterization techniques (such as X - ray diffraction (XRD), energy - dispersive X - ray spectroscopy (EDS), ultraviolet - visible spectroscopy (UV - Vis), etc.) to evaluate the structural, optical and electrical properties of these films. The main purpose of the study is to understand how the film thickness affects these properties and the inter - relationships among these properties, thereby providing theoretical support and technical guidance for the application of Cu₂S thin films in transparent conductive materials (TCMs). Through the above research, the authors hope to reveal the following aspects: 1. **Film Thickness and Structural Properties**: Through XRD analysis, determine the influence of film thickness on structural parameters such as lattice constant and grain size. 2. **Film Thickness and Optical Properties**: Use UV - Vis spectroscopy to evaluate the changes in optical bandgap, refractive index and extinction coefficient of films with different thicknesses. 3. **Film Thickness and Electrical Properties**: Through resistivity measurement and Hall effect test, explore the influence of film thickness on carrier concentration and mobility. 4. **Comprehensive Analysis**: Combine XRD, optical and electrical data to comprehensively evaluate the influence of film thickness on the performance of Cu₂S thin films and provide a basis for optimizing the film preparation process. In short, this study aims to deeply understand the influence of the thickness of Cu₂S thin films on their performance and provide a scientific basis for the development of high - performance transparent conductive materials.

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