Abstract:This study presents a cost competitive approach to fabricate phase-pure kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin films through an environmental-friendly, ethanol-based solution process, and subsequent dip-coating deposition. The research highlights the significance of controlled heat treatment strategies, utilizing elemental sulfur and selenium flakes, in tailoring the microstructural and opto-electronic properties of the precursor Cu 2 ZnSnS 4 thin films. It is demonstrated that the selenization atmosphere, especially the amount of selenium and the duration of heat treatment, plays a critical role in determining the grain structure and phase purity. Optimal conditions involving selenization at 575 °C for 15 min with 1.5 g of Se yielded single-phase CZTSSe thin films, confirmed by the XRD and Raman analysis. Further, the Se/(S + Se) ratio of the phase-pure CZTSSe thin film was found to be 0.68, estimated from EDS analysis. These films exhibited a compact, large-grained microstructure with a thickness of 1.2 μm, marking a significant advancement in the development of CZTSSe films for efficient photovoltaic applications. The optical bandgap (E g ) of the phase-pure CZTSSe thin film was found to be 1.06 eV, and very high white light sensitivity at a bias potential of 6 V, highly suitable for photovoltaic. The resistivity ( ρ ), carrier concentration ( n ), and Hall mobility ( μ ) have estimated from Hall measurement. The results indicated that the opto-electronic characteristics of the grown film are promising for solar cell application.

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