Fabrication of phase-pure and large-grained Cu3BiS3 films by a two-stage process for thin film solar cells

U. Chalapathi,K. Mallikarjuna,K.N. Chidambara Kumar,Venkateswarlu Gonuguntla,Adel El-marghany,P. Rosaiah,Si-Hyun Park
DOI: https://doi.org/10.1016/j.solidstatesciences.2024.107522
IF: 3.752
2024-05-01
Solid State Sciences
Abstract:Copper-bismuth-sulfide (Cu3BiS3) has gained great interest as solar cell absorber owing to the advantages of being cheap, abundant, and non-toxic. Fabrication of phase-pure and large-grain absorbers are desirable for their integration in solar cells. Herein, we have used a sequential evaporation and chalcogenization (350–450 o C) process to fabricate phase-pure and large-grain Cu3BiS3 films. X-ray diffraction indicated a CuS secondary phase at 350 °C and single-phase Cu3BiS3 at 400 and 450 °C in the sulfurized films. Elemental analysis revealed a near-stoichiometric Cu3BiS3 composition for all the films. X-ray photoelectron spectroscopy was used to assess the valence states of elements. Microstructural analysis confirmed the formation of compact and large-grained Cu3BiS3 films with an average grain size of 5 μm at 350 °C. The grain size decreased with increasing sulfurization temperature (400–450 °C). The direct bandgap decreases from 1.42 eV to 1.32 eV with increasing sulfurization temperature from 350 to 450 °C. Hall measurements indicated decreased electrical resistivity and increased hole mobility and carrier concentration with increasing the sulfurization temperature. From this study, the Cu3BiS3 absorbers produced at 400 o C exhibited superior phase purity and good quality suitable for the solar cells.
chemistry, physical, inorganic & nuclear,physics, condensed matter
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