Abstract:Using vapor phase co‐evaporation, Cu2AgBiI6 thin films and photovoltaic devices are fabricated. Enhanced photoluminescence (PL) is generally desirable for solar absorbers, but the PL increase is attributed to the formation of CuI impurity domains influenced by post‐deposition annealing temperature. These domains, with defect‐mediated optical transitions, hinder charge‐carrier transport, while the primary limitation in Cu2AgBiI6 materials is the short electron diffusion length. Quaternary copper‐silver‐bismuth‐iodide compounds represent a promising new class of wide‐bandgap (2 eV) semiconductors for photovoltaic and photodetector applications. In this study, vapor phase co‐evaporation is utilized to fabricate Cu2AgBiI6 thin films and photovoltaic devices. The findings show that the properties of vapor‐deposited films are highly dependent upon processing temperature, exhibiting increased pinhole density and transforming into a mixture of quaternary, binary, and metallic phases depending on the post‐deposition annealing temperature. This change in phase is accompanied by an enhancement in photoluminescence (PL) intensity and charge‐carrier lifetime, along with the emergence of an additional absorption peak at high energy (≈3 eV). Generally, increased PL is a desirable property for a solar absorber material, but this change in PL is ascribed to the formation of CuI impurity domains, whose defect‐mediated optical transition dominates the emission properties of the thin film. Via optical pump terahertz probe spectroscopy, it is revealed that CuI impurities hinder charge‐carrier transport in Cu2AgBiI6 thin films. It is also revealed that the predominant performance limitation in Cu2AgBiI6 materials is the short electron‐diffusion length. Overall, the findings pave the way for potential solutions to critical issues in copper‐silver‐bismuth‐iodide materials and indicate strategies to develop environmentally compatible wide‐bandgap semiconductors.

Thermally Co-Evaporated Ternary Chalcogenide AgBiS2 Thin Films for Photovoltaic Applications: New Route for AgBiS2 Synthesis and Phase Investigation

Fabrication of phase-pure and large-grained Cu3BiS3 films by a two-stage process for thin film solar cells

Aqueous-Solution-Based Approach Towards Carbon-Free Sb2 S3 Films for High Efficiency Solar Cells.

Microstructural and Optical Properties of Sb2S3 Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

Fabrication of Ag injection in Bi2S3 (AgBiS2) thin films for photoelectrochemical cell applications

Solution‐Crystalized AgBiS2 Films for Solar Cells Generating a Photo‐Current Density Over 31 mA cm−2

Colloidal AgBiS2 nanocrystals with reduced recombination yield 6.4% power conversion efficiency in solution-processed solar cells

Efficient planar antimony sulfide thin film photovoltaics with large grain and preferential growth

Post-Deposition In-Situ Passivation of AgBiS2 Nanocrystal Inks for High-Efficiency Ultra-Thin Solar Cells

Precursor Engineering of Solution‐Processed Sb 2 S 3 Solar Cells

Cation exchange synthesis of AgBiS$_2$ quantum dots for highly efficient solar cells

Compositional Transformation and Impurity‐Mediated Optical Transitions in Co‐Evaporated Cu2AgBiI6 Thin Films for Photovoltaic Applications

Antimony sulfide thin films in chemically deposited thin film photovoltaic cells

Thermal diffused post-selenization for enhancing the photovoltaic performance of thermally evaporated Sb 2 Se 3 solar cell

Solvent‐Assisted Hydrothermal Deposition Approach for Highly‐Efficient Sb2(S,Se)3 Thin‐Film Solar Cells

Solution-processed ZnBi2S4 polycrystalline thin films for low noise photodetection

Two-step Synthesis of Antimony Sulfide Thin films: Enhancement in Physical Properties Through Sulfurization

Solution processed bismuth oxyiodide (BiOI) thin films and solar cells

Antimony Doping of CsBi 3 I 10 for Tailoring the Film Morphology and Defects toward Efficient Lead-Free Thin-Film Solar Cells

Optoelectrical properties of the ternary chalcogenide SnSb2S5 as a new absorber layer for photovoltaic application

Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open‐Circuit Voltage