Fabrication of Ag injection in Bi2S3 (AgBiS2) thin films for photoelectrochemical cell applications

Daniel, T
DOI: https://doi.org/10.1007/s12034-024-03290-5
IF: 1.878
2024-08-25
Bulletin of Materials Science
Abstract:The present investigation deals with the detailed analysis of opto-structural, morphological, electrical properties and photoelectrochemical cell performances of thermally evaporated Ag x Bi 2− x S 3− y thin film prepared for various x and y values ( x = y = 0, 0.25, 0.50, 0.75 and 1). The cubic-structured AgBiS 2 along with orthorhombic-structured Bi 2 S 3 as confirmed from X-ray diffraction (XRD) analysis. The Ag x Bi 2− x S 3− y ( x = y = 0–1) films showed higher optical absorption coefficient (10 5 cm −1 ) in the visible region and band gap values were found to be decreased from 2.08 to 1.35 eV. Scanning electron microscope (SEM) images have visualized the uniform distribution of spherical particles. Carrier concentration of the films are better than x = y = 0 as observed from Mott–Schottky plots. The FTO/Ag x Bi 2− x S 3− y ( x = y = 1) photoelectrochemical cell yields the photoconversion efficiency (PCE) of 7.03%.
materials science, multidisciplinary
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