Abstract:Sb2S3 is a promising environmentally‐friendly semiconductor for stable and high efficiency thin film solar cells, but, like many other polycrystalline materials, is limited by non‐radiative recombination and carrier scattering by grain boundaries. Herein, we show how the grain boundary density in Sb2S3 films can be significantly reduced from 1068±40 nm μm−2 (largest grain ∼5 μm) to 327±23 nm μm−2 (largest grain >15 μm) by incorporating an appropriate amount of Ce3+ into the precursor solution for Sb2S3 deposition. Through extensive characterization of the structural, morphological and optoelectronic properties, complemented with computations, we reveal the underlying mechanisms responsible for the increased grain size and improved photovoltaic performance of Sb2S3 solar cells. A critical factor behind the reduction in grain boundary density is the formation of an ultrathin layer of Ce2S3 at the CdS/Sb2S3 interface, which could reduce the interfacial energy and increase the adhesion work between Sb2S3 and the substrate to encourage heterogeneous nucleation of Sb2S3, as well as increase the rate of grain growth. Through a reduction in non‐radiative recombination at grain boundaries and/or the CdS/Sb2S3 heterointerface as well as improved charge‐carrier transport properties at the heterojunction, we achieved high performance Sb2S3 solar cells with a power conversion efficiency reaching 7.66%, and an open‐circuit voltage (VOC) of 796 mV. This VOC is the highest reported thus far for Sb2S3 solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb2S3 absorber films via in‐situ chemical environment tuning, which can be more broadly applied to other thin film systems to improve their photovoltaic performance. This article is protected by copyright. All rights reserved

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