A new phospholipid phosphatase, PRG-1, is involved in axon growth and regenerative sprouting

A. Bräuer,N. Savaskan,H. Kühn,S. Prehn,O. Ninnemann,R. Nitsch

DOI: https://doi.org/10.1038/nn1052

IF: 25

2003-06-01

Nature Neuroscience

Abstract:

What problem does this paper attempt to address?

Synthesis of ternary copper antimony sulfide via solventless thermolysis or aerosol assisted chemical vapour deposition using metal dithiocarbamates

Fadiyah Makin,Firoz Alam,Mark A. Buckingham,David J. Lewis

DOI: https://doi.org/10.1038/s41598-022-08822-9

IF: 4.6

2022-04-04

Scientific Reports

Abstract:Abstract Copper antimony sulfide (Cu-Sb-S) has recently been proposed as an attractive alternative photovoltaic material due to the earth-abundant and non-toxic nature of the elements, high absorption coefficients and band gaps commensurate with efficient harvesting of solar photonic flux across multiple phases of Cu-Sb-S. These materials are therefore highly desirable and sustainable and scalable deposition techniques to produce them are of interest. In this paper, we demonstrate two facile, low-temperature and inexpensive techniques (solventless thermolysis and aerosol-assisted chemical vapor deposition (AACVD)) for the preparation of binary digenite (Cu 1.8 S), chalcocite (Cu 2 S) and stibnite (Sb 2 S 3 ) and several phases of ternary copper-antimony-sulfide (Cu 2x Sb 2(1−x) S y , where 0 ≤ x ≤ 1). It was found that by utilising these different techniques and varying the ratio of Cu:Sb, pure phases of ternary chalcostibite (CuSbS 2 ), fematinite (Cu 3 SbS 4 ) and tetrahedrite (Cu 12 Sb 4 S 13 ) can be achieved. Two single-source precursors were investigated for this purpose, namely the diethyldithiocarbamate (DTC) complexes of copper and antimony Cu(DTC) 2 and Sb(DTC) 3 . These were decomposed both individually (to produce binary materials) and combined (to produce ternary materials) at different ratios. From the solventless thermolysis and AACVD methods, either particulate or thin film material was formed, respectively. These materials were then characterised by powder XRD, SEM, EDX and Raman spectroscopies to determine the crystalline phase, material morphology and uniformity of elemental composition. This analysis demonstrated that as the Cu-content increases, the phase of the ternary material changes from chalcostibite (CuSbS 2 ) and fematinite (Cu 3 SbS 4 ) at a low Cu:Sb ratio to tetrahedrite (Cu 12 Sb 4 S 13 ) at a high Cu:Sb ratio.

multidisciplinary sciences
Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Liang Wang,Bo Ye,Zhe Xia,Meiying Leng,Ying Zhou,Desheng Xue,Jie Zhong,Liang Gao,Haisheng Song,Jiang Tang

DOI: https://doi.org/10.1016/j.solmat.2015.08.016

2016-01-01

Abstract:Cu12Sb4S13 is a very potential non-toxic, earth-abundant absorber material for thin film solar cells yet its photovoltaic related properties are rarely explored so far. In this paper, we first developed a hydrazine solution process to fabricate phase-pure, highly crystalline, large grain Cu12Sb4S13 film and then carried out investigations to study the chemical, optical and electrical properties of Cu12Sb4S13 film in detail. Careful X-ray photoelectron spectroscopy (XPS) measurements indicated Cu12Sb4S13 could be oxidized into Cu3SbS4 in a sulfur rich atmosphere at elevated temperature, and the valance states of our Cu12Sb4S13 are determined as Cu+12Sb3+3Sb5+1S2−13 rather than the previously reported Cu+10Cu22+Sb3+4S2−13. Optical absorption investigation showed that Cu12Sb4S13 has a direct band gap of 1.47 eV. Ultraviolet photoelectron spectroscopy (UPS) study revealed that the conduction band and valence band are located at −3.52 eV and −4.99 eV relative to the vacuum level, respectively. Finally, we built a photodetector based on Cu12Sb4S13 film achieving 0.15 A/W responsivity and a heterojunction solar cell having 0.04% solar conversion efficiency. Our preliminary experimental study indicated that Cu12Sb4S13 may be a very attractive absorber material for photovoltaic application.
Preparation and Characterization of Cuins2 Thin Films for Solar Cells by Chemical Bath Deposition

HX Tang,M Yan,H Zhang,XY Ma,L Wang,DR Yang

IF: 3.1

2005-01-01

Chemical Research in Chinese Universities

Abstract:Introduction Recent years, chalcopyrite semiconductors have been successfully applied as absorber layers for polycrystalline thin-film solar cells. Among the ternary compound semiconductors, CuInS2 thin films with a direct bandgap of about 1.50 eV and a large absorption coefficient in the range of 104-105cm-1[1] are one kind of the most promising optical absorbers for high efficiency thin film solar cells.To date, CuInS2-based solar cells have shown conversion efficiency of about 12. 5%[2]. They exhibit long-term stability without any signs of degradation.
Electron Density and Optoelectronic Properties of Copper Antimony Sulphur Ternary Compounds for Photovoltaic Applications

Mohamed Khairy,Pingping Jiang,Pascal Boulet,Marie-Christine Record

DOI: https://doi.org/10.1007/s11664-022-09650-3

IF: 2.1

2022-05-02

Journal of Electronic Materials

Abstract:Design of efficient solar energy-conversion materials has attracted much interest in the last few decades. Among these materials, copper-based semiconducting chalcogenides have been employed as alternatives for copper indium gallium selenide thin-film solar cells due to their low toxicity and earth-abundant absorber components. In the present manuscript, structural, electronic, quantum theory of atoms in molecules (QTAIM) topological, and optical properties of ternary chalcogenide CuSbS2, Cu3SbS3, and Cu3SbS4 have been investigated using the full potential linear augmented plane wave method. An indirect band gap is observed for CuSbS2 with Eg = 1.18 eV and a direct band gap is found for Cu3SbS3, and Cu3SbS4 with Eg = 1.28 and 1.0 eV, respectively. The valence band maximum of CuSbS2, Cu3SbS3, and Cu3SbS4 are mainly predominated by a strong Cu-3d and S-3p orbitals hybridization. The conduction band of CuSbS2 and Cu3SbS3 are mainly characterized by Sb-5p orbital and S-3p orbital mixing. However, conduction band of Cu3SbS4 is dominated by the mixing of Sb-5s and S-3p orbitals. It is found that the Cu-S and Sb-S bonds lie in the transit closed-shell zone, between the typical ionic and covalent bonds, the Cu-S bonds being more ionic in nature and the Sb-S bonds being more covalent. The optical properties of CuSbS2, Cu3SbS3, and Cu3SbS4 in terms of absorption coefficient, extinction coefficient, refractive index, and reflectivity have been investigated. It is found that Cu3SbS4 is probably less suitable for optical application than CuSbS2 and Cu3SbS3 as the chemical bonds in Cu3SbS4 are seemingly less polarizable, as assumed from the QTAIM analysis, which seems to be correlated with a lower absorption coefficient.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Structure, Morphology, and Photoelectric Performances of Te-Sb 2 Se 3 Thin Film Prepared via Magnetron Sputtering.

Donglou Ren,Xue Luo,Shuo Chen,Zhuanghao Zheng,Michel Cathelinaud,Guangxing Liang,Hongli Ma,Xvsheng Qiao,Xianping Fan,Xianghua Zhang

DOI: https://doi.org/10.3390/nano10071358

IF: 5.3

2020-01-01

Nanomaterials

Abstract:Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (V-oc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb(2)Se(3)thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)(n)ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb(2)Se(3)film annealed at 325 degrees C showed a maximum photocurrent density of 1.91 mA/cm(2)with a light intensity of 10.5 mW/cm(2)at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.
Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3Thin Film Prepared via Magnetron Sputtering

Donglou Ren,Xue Luo,Shuo Chen,Zhuanghao Zheng,Michel Cathelinaud,Guangxing Liang,Hongli Ma,Xvsheng Qiao,Xianping Fan,Xianghua Zhang

DOI: https://doi.org/10.3390/nano10071358

IF: 5.3

2020-01-01

Nanomaterials

Abstract:Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (V-oc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb(2)Se(3)thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)(n)ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb(2)Se(3)film annealed at 325 degrees C showed a maximum photocurrent density of 1.91 mA/cm(2)with a light intensity of 10.5 mW/cm(2)at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.
Fabrication of phase-pure and large-grained Cu3BiS3 films by a two-stage process for thin film solar cells

U. Chalapathi,K. Mallikarjuna,K.N. Chidambara Kumar,Venkateswarlu Gonuguntla,Adel El-marghany,P. Rosaiah,Si-Hyun Park

DOI: https://doi.org/10.1016/j.solidstatesciences.2024.107522

IF: 3.752

2024-05-01

Solid State Sciences

Abstract:Copper-bismuth-sulfide (Cu3BiS3) has gained great interest as solar cell absorber owing to the advantages of being cheap, abundant, and non-toxic. Fabrication of phase-pure and large-grain absorbers are desirable for their integration in solar cells. Herein, we have used a sequential evaporation and chalcogenization (350–450 o C) process to fabricate phase-pure and large-grain Cu3BiS3 films. X-ray diffraction indicated a CuS secondary phase at 350 °C and single-phase Cu3BiS3 at 400 and 450 °C in the sulfurized films. Elemental analysis revealed a near-stoichiometric Cu3BiS3 composition for all the films. X-ray photoelectron spectroscopy was used to assess the valence states of elements. Microstructural analysis confirmed the formation of compact and large-grained Cu3BiS3 films with an average grain size of 5 μm at 350 °C. The grain size decreased with increasing sulfurization temperature (400–450 °C). The direct bandgap decreases from 1.42 eV to 1.32 eV with increasing sulfurization temperature from 350 to 450 °C. Hall measurements indicated decreased electrical resistivity and increased hole mobility and carrier concentration with increasing the sulfurization temperature. From this study, the Cu3BiS3 absorbers produced at 400 o C exhibited superior phase purity and good quality suitable for the solar cells.

chemistry, physical, inorganic & nuclear,physics, condensed matter
Progress in development of copper antimony sulfide thin films as an alternative material for solar energy harvesting

B. Krishnan,S. Shaji,R. Ernesto Ornelas

DOI: https://doi.org/10.1007/s10854-015-3092-2

2015-04-29

Abstract:The increasing energy demand and the limitations of the existing technologies due to the scarcity, cost and toxicity of the materials urge the researchers to hunt for efficient thin film solar cells based on earth-abundant, inexpensive and less toxic materials. For a decade, binary and ternary antimony based sulfides have gained attention due to their possible applications in solar cells. This interest is the basis of this review. In this review article, we describe basic properties of copper antimony sulfide (CuSbS2) thin films to investigate their photovoltaic applications. A detailed description of the preparation methods, studies on morphologies and optoelectronic properties based on published work, including our experience are presented. A systematic review is done to demonstrate emerging interest in the photovoltaic performance of this compound. This review gives an in depth discussion on the structure, morphology, optical and electrical properties of copper antimony sulfide thin films.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Phase pure CuSbS2 thin films by heat treatment of electrodeposited Sb2S3/Cu layers

R.G. Avilez García,Andrea Cerdán-Pasarán,E. A. Rueda Perez,Mou Pal,M. Miranda Hernández,N.R. Mathews

DOI: https://doi.org/10.1007/s10008-019-04475-3

IF: 2.747

2020-01-01

Journal of Solid State Electrochemistry

Abstract:In this work, we report the fabrication of CuSbS2 (CAS) thin films from Sb2S3/Cu multilayer developed by using electrodeposition. Sb2S3 thin films of approximately 250 nm were deposited by pulse electrodeposition from a bath containing SbCl3 and Na2S2O3 precursors onto which Cu was electrodeposited. In order to optimize the formation of pure chalcostibite phase of CuSbS2, the thickness of Cu layer was varied from 55 to 130 nm. The Sb2S3/Cu multilayer was heat treated at 250 °C under N2/S atmosphere for 30 min for its conversion into CuSbS2 and to enhance the crystallinity. XRD spectra showed orthorhombic phase for all CAS samples. Raman analysis confirmed that the sample with 100 nm of Cu thickness has the highest phase purity. SEM image demonstrated a homogeneous thin film with spherical grains. The chemical states of the elements in the phase pure CuSbS2 film were obtained from X-ray photoelectron spectroscopy evidencing the oxidation states as Cu+Sb3+S2−. The optical characterization demonstrated a band gap of 1.45 eV. Furthermore, the results showed that the CuSbS2 thin film is photosensitive and p-type. The energy level band diagram reaffirms its potential as a good absorber layer in thin film solar cells with suitable charge transport pathways.

electrochemistry
Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Shreyash Hadke,Menglin Huang,Chao Chen,Ying Fan Tay,Shiyou Chen,Jiang Tang,Lydia Wong

DOI: https://doi.org/10.1021/acs.chemrev.1c00301

IF: 62.1

2022-01-01

Chemical Reviews

Abstract:Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se2- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb2X3, GeX, SnX), ternary (Cu2SnX3, Cu2GeX3, CuSbX2, AgBiX2), and quaternary (Cu2ZnSnX4, Ag2ZnSnX4, Cu2CdSnX4, Cu2ZnGeX4, Cu2BaSnX4) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.
Ultrasonic spray synthesis, photoelectric properties and photovoltaic performances of chalcogenide CaSnS3

,J. T. Jia,X. H. Yang,,L. W. Wang,

DOI: https://doi.org/10.15251/cl.2024.217.543

2024-09-01

Chalcogenide Letters

Abstract:Chalcogenide perovskites are promising lead-free, stable absorber materials for solar cells. This work reports the synthesis of orthorhombic phase pure CaSnS3 thin films by facile low temperature sulfurization of solution-processed CaSnO3 oxide precursors. Structural characterization confirms complete anion exchange to produce crystalline CaSnS3 films with vertically aligned rod-like grains. Optical studies show strong visible light absorption with direct bandgap of 1.72 eV, ideal for photovoltaics. Electrical measurements indicate p-type conductivity with hole concentration of 1.2×1017 cm-3 and mobility around 8 cm2V-1s-1 at room temperature. First-principles DFT calculations corroborate the p-type electronic structure. Prototype CaSnS3 solar cells are fabricated with TiO2 electrode, demonstrating power conversion efficiency of 2.5% under AM1.5G, open-circuit voltage of 0.55 V, short circuit current density of 11.5 mA/cm2 and fill factor of 0.62. The cells also exhibit remarkable ambient shelf stability over 6 months. The comprehensive results validate the photovoltaic potential of these earth abundant, sustainable chalcogenide perovskites synthesized via scalable low-cost solution methods. Further interface engineering can enable enhanced efficiencies.

materials science, multidisciplinary,physics, applied
Two-step Synthesis of Antimony Sulfide Thin films: Enhancement in Physical Properties Through Sulfurization

Kavya D M,B Jyeshta Prabhu Prabhu,Nagabhushan Jnaneshwar Choudhari,Mariot Jose Panjikaran,Sajan D George,Suresh Kulkarni,Vikash Mishra,Raviprakash Y

DOI: https://doi.org/10.1088/2053-1591/ad3897

IF: 2.025

2024-03-28

Materials Research Express

Abstract:Recently, there has been an increase in the use of antimony sulfide (Sb2S3) in Si-based tandem solar cells as a potential absorber material for top sub-cells. The choice of the material stems from the favoured properties such as appropriate bandgap, simple binary composition, nontoxic elements, and long-term stability. However, the physical properties and practical applicability of these materials depend largely on their synthesis conditions. In this work, we investigate the role of sulfurization on the structural, morphological, compositional, and optical properties of Sb2S3 thin films deposited on soda-lime glass via a thermal evaporation technique. Sulfurization was performed on the as-prepared thin films in a customized Chemical Vapor Deposition (CVD) chamber at five different temperatures. Analysis of the crystallinity of the film using the X-ray diffraction technique illustrates the transformation of the film from impure, poor crystalline phase to phase-pure, and highly crystalline orthorhombic structure due to sulfurization. Scanning electron microscopic investigations of the samples revealed better grains with nanorods on the surface at a temperature of 4000C. For the samples investigated here, the energy values estimated via density functional theory (DFT) calculations agreed well with the experimental data obtained from UV-visible absorption spectral studies. Additionally, it was observed that the desired near-stoichiometric Sb2S3 thin films could be achieved via sulfurization, and the presence of Sb2S3 in all samples was confirmed via Raman spectroscopic studies. Additionally, the defects and trap states of the prepared films were investigated using photoluminescence studies, and donor and acceptor defects were identified. Our study revealed that sulfur rich Sb2S3 films prepared at a sulfurization temperature of 400°C produced the desired structure, morphology, and optical qualities for future photovoltaic applications.

materials science, multidisciplinary
Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach

,Y. B. Kishore Kumar,S. Guru Prasad,,A. S. Swapna Smitha,,U. Chalapathi,,G. Suresh Babu,,Y. Jayasree,,P. Uday Bhaskar,,Si-Hyun Park,

DOI: https://doi.org/10.15251/cl.2024.219.719

2024-09-27

Chalcogenide Letters

Abstract:This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS2, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 105 cm-1 . Optical studies indicate that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. CuSbS2 thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.

materials science, multidisciplinary,physics, applied
Antimony sulfide thin films in chemically deposited thin film photovoltaic cells

Sarah Messina,M.T.S. Nair,P.K. Nair

DOI: https://doi.org/10.1016/j.tsf.2006.12.155

IF: 2.1

2007-05-01

Thin Solid Films

Abstract:Antimony sulfide thin films of thickness ≈500 nm have been deposited on glass slides from chemical baths constituted with SbCl3 and sodium thiosulfate. Smooth specularly reflective thin films are obtained at deposition temperatures from −3 to 10 °C. The differences in the film thickness and improvement in the crystallinity and photoconductivity upon annealing the film in nitrogen are presented. These films can be partially converted into a solid solution of the type Sb2SxSe3−x, detected in X-ray diffraction, through heating them in contact with a chemically deposited selenium thin film. This would decrease the optical band gap of the film from ≈1.7 eV (Sb2S3) to ≈1.3 eV for the films heated at 300 °C. Similarly, heating at 300 °C of sequentially deposited thin film layers of Sb2S3–Ag2Se, the latter also from a chemical bath at 10 °C results in the formation of AgSb(S/Se)2 with an optical gap of ≈1.2 eV. All these thin films have been integrated into photovoltaic structures using a CdS window layer deposited on 3 mm glass sheets with a SnO2:F coating (TEC-15, Pilkington). Characteristics obtained in these cells under an illumination of 850 W/m2 (tungsten halogen) are as follows: SnO2:F–CdS–Sb2S3–Ag(paint) with open circuit voltage (Voc) 470 mV and short circuit current density (Jsc) 0.02 mA/cm2; SnO2:F–CdS–Sb2S3–CuS–Ag(paint), Voc≈460 mV and Jsc≈0.4 mA/cm2; SnO2:F–CdS–Sb2SxSe3−x–Ag(paint), Voc≈670 mV and Jsc≈0.05 mA/cm2; SnO2:F–CdS–Sb2S3–AgSb(S/Se)2–Ag(paint), Voc≈450 mV and Jsc≈1.4 mA/cm2. We consider that the materials and the deposition techniques reported here are promising toward developing ‘all-chemically deposited solar cell technologies.’

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Aqueous-Solution-Based Approach Towards Carbon-Free Sb2 S3 Films for High Efficiency Solar Cells.

Shi'ang Li,Yan Zhang,Rongfeng Tang,Xiaomin Wang,Tong Zhang,Guoshun Jiang,Weifeng Liu,Changfei Zhu,Tao Chen

DOI: https://doi.org/10.1002/cssc.201801336

IF: 8.4

2018-01-01

ChemSusChem

Abstract:Sb2 S3 is a new kind of photovoltaic material that is promising for practical application in solar cells owing to its suitable bandgap, earth-abundant elements, and excellent stability. Here, we report on an aqueous-solution-based approach for the synthesis of Sb2 S3 films from easily accessible Sb2 O3 as antimony source. In this reaction, 3-mercaptopropionic acid was applied as both solvent and sulfur precursor, aqueous ammonia was employed as a solvent. After simple annealing at a temperature as low as 270 °C, the spin-coated precursor solution can generate compact, flat, uniform, and well-crystallized Sb2 S3 film. Mechanistic study showed that the formation of Sb-complex with ammonium carboxylates leads to the successful dissolution of Sb2 O3 powder. A suitable annealing process was able to generate carbon-free Sb2 S3 films. Planar heterojunction solar cell based on the as-prepared Sb2 S3 film delivered a power conversion efficiency of 5.57 %, which is the highest efficiency of solution-processed planar heterojunction Sb2 S3 solar cells and a high value in all kinds of Sb2 S3 solar cells. This research provides a convenient approach for the fabrication of device-quality Sb2 S3 films, and highlights solution processing of carbon-free metal chalcogenide thin films as a suitable process for application in optoelectronic devices.
Solution‐Processed Compact Sb 2 S 3 Thin Films by a Facile One‐Step Deposition Method for Efficient Solar Cells

Liangxin Zhu,Junwei Chen,Rong Liu,Chao Dong,Shangfeng Yang,Tao Chen,Chong Chen,Quinn Qiao,Mingtai Wang

DOI: https://doi.org/10.1002/solr.202100666

IF: 9.1726

2021-10-04

Solar RRL

Abstract:Antimony sulfide (Sb2S3) is a promising photon harvesting material for solar cells. Here we report a facile one-step deposition method for controllably preparing Sb2S3 nanoparticle films with a preferential [221]-orientation to a certain extent from a novel precursor solution formed by dissolving antimony acetate and thiourea in acidified N,N-dimethylformamide. With titania (TiO2) nanoparticle films as substrates for in situ growing Sb2S3 films, the high-quality Sb2S3/TiO2 planar heterojunction films are obtained for efficient solar cells. The effects of the concentration and [S]/[Sb] molar ratio in the precursor solution on the Sb2S3 film formation and the device performance are investigated. A considerable power conversion efficiency of 5.74% is achieved under AM 1.5G illumination (100 mW/cm2), which is the highest efficiency for the solar cells based on solution-processed Sb2S3 nanoparticle films by one-step deposition method without further modification. This study provides a promising solution-processing method to prepare high-quality Sb2S3 films for efficient solar cells and other optoelectronics.This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

M. Y. Zaki,F. Sava,I. D. Simandan,A. T. Buruiana,C. Mihai,A. Velea,A. C. Galca

DOI: https://doi.org/10.1038/s41598-022-12045-3

2022-05-14

Applied Physics

Abstract:Abstract Cu 2 SnS 3 (CTS) is emerging as a promising absorber for the next generation thin film solar cells (TFSC) due to its excellent optical and electronic properties, earth-abundance and eco-friendly elemental composition. In addition, CTS can be used as precursor films for the Cu 2 ZnSnS 4 (CZTS) synthesis. The optical properties of CTS are influenced by stoichiometry, crystalline structure, secondary phases and crystallite size. Routes for obtaining CTS films with optimized properties for TFSC are still being sought. Here, the CTS thin films synthesized by magnetron sputtering on soda lime glass (SLG) using Cu and SnS 2 targets in two different stacks, were studied. The SLG\Cu\SnS 2 and SLG\SnS 2 \Cu stacks were annealed in S and Sn + S atmospheres, at various temperatures. Both stacks show a polymorphic structure, and higher annealing temperatures favor the monoclinic CTS phase formation. Morphology is influenced by the stacking order since a SnS 2 top layer generates several voids on the surface due to the evaporation of SnS, while a Cu top layer provides uniform and void-free surfaces. The films in the copper-capped stack annealed under Sn + S atmosphere have the best structural, morphological, compositional and optical properties, with tunable band gaps between 1.18 and 1.37 eV. Remarkably, secondary phases are present only in a very low percent (< 3.5%) in samples annealed at higher temperatures. This new synthesis strategy opens the way for obtaining CTS thin films for solar cell applications, that can be used also as intermediary stage for CZTS synthesis.
Microstructural and Optical Properties of Sb2S3 Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

G. Liang,Chunfeng Lan,P. Fan,Huibin Sun,Huabin Lan,Huanxin Peng,Zhenghua Su,Dong-ping Zhang,Jingting Luo

DOI: https://doi.org/10.1002/pssr.201800025

2018-06-01

Abstract:Antimony sulfide (Sb2S3) thin film is a promising light absorber for solar cell application due to its suitable bandgap, high absorption coefficient, and non‐toxic constituents. However, thermally evaporated Sb2S3 thin films experience sulfur loss during evaporation and post‐annealing, which do harm to the film quality and the performance of the devices. In this work, for the first time Sb2S3 thin films are prepared by thermally evaporating antimony pentasulfide (Sb2S5) precursor. The thermal and microstructural properties of Sb2S3 and Sb2S5 precursors are studied and compared. The crystallization of the Sb2S3 film (S‐5) prepared from Sb2S5 precursor is inferior to that (S‐3) from Sb2S3 powder. And the annealed S‐5 film shows a larger bandgap of 1.69 eV than S‐3. However, compared with S‐3, planar S‐5 thin film solar cells in the configuration of glass/(SnO2:F) FTO/TiO2/Sb2S3/Spiro‐OMeTAD/Ag exhibit an apparently improved photovoltaic performance, with the best power conversion efficiency of 3.75% and high fill factor of 0.56, which is the highest efficiency of thermally evaporated planar Sb2S3 solar cell. The capacitance–voltage (C–V) measurement indicates that this might come from the higher C–V derived space‐charge density in S‐5. This work offers a new method to prepare Sb2S3 thin films for efficient solar cells.

Engineering,Materials Science,Physics
Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Zhenglin Jia,Marcello Righetto,Yujie Yang,Chelsea Q. Xia,Yanyan Li,Ruiming Li,Yuwei Li,Bin Yu,Yong Liu,Huiming Huang,Michael B. Johnston,Laura M. Herz,Qianqian Lin

DOI: https://doi.org/10.1021/acsenergylett.3c00140

IF: 22

2023-02-17

ACS Energy Letters

Abstract:Chalcogenide-based semiconductors have recently emerged as promising candidates for optoelectronic devices, benefiting from their low-cost, solution processability, excellent stability and tunable optoelectronic properties. However, the understanding of their fundamental optoelectronic properties is far behind the success of device performance and starts to limit their further development. To fill this gap, we conduct a comparative study of chalcogenide absorbers across a wide material space, in order to assess their suitability for different types of applications. We utilize optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity techniques to fully analyze their charge-carrier dynamics. We show that antimony-based chalcogenide thin films exhibit relatively low charge-carrier mobilities and short lifetimes, compared with bismuth-based chalcogenides. In particular, AgBiS2 thin films possess the highest mobility, and Sb2S3 thin films have less energetic disorder, which are beneficial for photovoltaic devices. On the contrary, Bi2S3 showed ultralong carrier lifetime and high photoconductive gain, which is beneficial for designing photoconductors.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
Preparation and properties of Cu2 MgSnS4 thin films and fabrication of heterojunction devices

N Aravind,Ronaldo Roy,K Kathir,Edwin Jose,M C Santhosh Kumar

DOI: https://doi.org/10.1088/1361-6641/ad9173

IF: 2.048

2024-11-14

Semiconductor Science and Technology

Abstract:Copper based chalcogenides have garnered growing importance in the area of thin film photovoltaics. Cu2MgSnS4 (CMTS) is one of the newest materials in this family of materials. It is a p-type material which find multiple applications in the field of photovoltaics. Cu2MgSnS4 thin films were deposited onto soda lime glass substrates using automated vacuum spray pyrolysis technique at a substrate temperature of 300 °C and annealed at different temperatures from 300 °C to 375 °C in steps of 25°C. The structural, elemental, morphological, optical, and electrical properties of the material were studied. X-Ray Diffraction studies showed that annealing eliminates impurity phases and improves crystallinity. Field Emission Scanning Electron Microscopy studies showed improved grain size and uniform deposition of the films. The energy bandgap of the as-prepared film is 2.02 eV and that of annealed films are around 2.5 eV. Hall measurements show that the material exhibit p-type conductivity with high value of conductivity, mobility and bulk concentration. Heterojunction devices were fabricated with chemical bath deposited CdS as a buffer layer and spray deposited Aluminium doped Zinc Oxide (Al:ZnO) as n-layer. Silver contacts were placed as electrodes over the top layer. The fabricated device architecture is . The junction parameters including rectification ratio, knee voltage, series resistance and Ideality factor of all the devices are calculated. The device annealed at 375 °C showed an ideality factor of 2.23, which is the best among all the fabricated devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter

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