Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach

,Y. B. Kishore Kumar,S. Guru Prasad,,A. S. Swapna Smitha,,U. Chalapathi,,G. Suresh Babu,,Y. Jayasree,,P. Uday Bhaskar,,Si-Hyun Park,
DOI: https://doi.org/10.15251/cl.2024.219.719
2024-09-27
Chalcogenide Letters
Abstract:This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS2, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 105 cm-1 . Optical studies indicate that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. CuSbS2 thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.
materials science, multidisciplinary,physics, applied
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