Abstract:Silver bismuth iodides (AgaBibIa+3b) are nontoxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their performance as light absorbers in solar cells. Herein, a strategy is introduced to tune the optoelectronic properties of AgaBibIa+3b by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1–0.3 eV upon modification with sulfide are demonstrated for AgBiI4, Ag2BiI5, Ag3BiI6, and AgBi2I7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO2 electron‐transporting scaffold, and a poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] hole‐transporting layer significantly outperform devices based on sulfide‐free materials, mainly due to enhancements in the photocurrent by up to 48%. A power conversion efficiency of 5.44 ± 0.07% (Jsc = 14.6 ± 0.1 mA cm−2; Voc = 569 ± 3 mV; fill factor = 65.7 ± 0.3%) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthetic procedures and an increase in the level of sulfide anionic substitution. A new class of inorganic photovoltaic materials, silver bismuth iodide sulfides, is introduced. The optoelectronic properties of these compounds can be tuned by variation of the sulfide to iodide ratio. Thin solar cells based on AgaBibIa+3b−2xSx light harvesters exhibit power conversion efficiencies above 5%, are stable under ambient conditions and can be produced on the centimeter‐size scale.

Thin‐Film Solar Cells of an Indium‐Modified Silver Antimony Sulfide Selenide Absorber Prepared by Spray Pyrolysis

Enhanced Crystallization and Optimized Morphology of Perovskite through Doping Indium-Based Metal-Organic Assembly: Achieving Significant Solar Cell Efficiency Enhancements

Thin-Film Solar Cells Based on Selenized CuSbS2 Absorber

Zinc Chloride‐treated Indium Sulfide as Buffer Layer for Cd‐free Antimony Selenide Solar Cells

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub>Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying

Silver Bismuth Sulfoiodide Solar Cells: Tuning Optoelectronic Properties by Sulfide Modification for Enhanced Photovoltaic Performance

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Towards high efficiency inverted Sb2Se3 thin film solar cells

Efficient In Situ Sulfuration Process in Hydrothermally Deposited Sb2S3 Absorber Layers

InCl3-modified SnO2 as Electron Transporting Layer for Cd-free Antimony Selenide solar cells

Crystal Growth Promotion and Defect Passivation by Hydrothermal and Selenized Deposition for Substrate-Structured Antimony Selenosulfide Solar Cells

Antimony sulfide thin films in chemically deposited thin film photovoltaic cells

Thermal diffused post-selenization for enhancing the photovoltaic performance of thermally evaporated Sb 2 Se 3 solar cell

Vapor Transport Deposition of Sb 2 (S,Se) 3 Solar Cells with Continuously Tunable Band Gaps

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Thin film solar cells based on Ag-substituted CuSbS2 absorber

Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High‐Efficient Planar Solar Cells

Suppressing Buried Interface Nonradiative Recombination Losses Towards High‐efficiency Antimony Triselenide Solar Cells