Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around Transistors

Yi-Ting Wu,Fei Ding,Meng-Hsueh Chiang,Jone F. Chen,Tsu-Jae King Liu

DOI: https://doi.org/10.1109/ted.2022.3150645

IF: 3.1

2022-04-01

IEEE Transactions on Electron Devices

Abstract:A six-transistor (6T) static random access memory (SRAM) cell design comprising inserted-oxide fin field-effect transistors (iFinFETs) is compared against other 6T SRAM cell designs comprising either FinFETs, gate-all-around (GAA) nanowire field-effect transistors (NWFETs), or forksheet field-effect transistors (FSHFETs). The FSHFET and iFinFET SRAM exhibit better read stability, write ability, and lower minimum operating voltage ( <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="8.382ex" height="2.843ex" style="vertical-align: -0.838ex;" viewBox="0 -863.1 3609 1223.9" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-6D" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-69" x="878" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-6E" x="1224" y="0"></use></g></g> <use xlink:href="#MJMAIN-29" x="3219" y="0"></use></g></svg></span> for the same cell size. To further reduce <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.478ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3219.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-6D" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-69" x="878" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-6E" x="1224" y="0"></use></g></g></g></svg></span> , we propose integrating high-current seven-nanowire iFinFETs with low-current three-nanowire NWFETs to achieve pull-up (PU):pass-gate (PG):pull-down (PD) ratio of 3:7:7. Due to a better PU ratio (0.41 versus 0.80), <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.478ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3219.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-6D" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-69" x="878" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-6E" x="1224" y="0"></use></g></g></g></svg></span> of 3:7:7 hybrid SRAM is reduced from 0.61 V of 7:7:7 iFinFET SRAM to 0.54 V without increasing the read or write access time. The static power consumption is reduced from 26 to 13 pW, and the dynamic power consumption is reduced from 117 to 101 nW due to lower gate capacitance and leakage current for the PU transistors.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMATHI-56" d="M52 648Q52 670 65 683H76Q118 680 181 680Q299 680 320 683H330Q336 677 336 674T334 656Q329 641 325 637H304Q282 635 274 635Q245 630 242 620Q242 618 271 369T301 118L374 235Q447 352 520 471T595 594Q599 601 599 609Q599 633 555 637Q537 637 537 648Q537 649 539 661Q542 675 545 679T558 683Q560 683 570 683T604 682T668 681Q737 681 755 683H762Q769 676 769 672Q769 655 760 640Q757 637 743 637Q730 636 719 635T698 630T682 623T670 615T660 608T652 599T645 592L452 282Q272 -9 266 -16Q263 -18 259 -21L241 -22H234Q216 -22 216 -15Q213 -9 177 305Q139 623 138 626Q133 637 76 637H59Q52 642 52 648Z"></path><path stroke-width="1" id="MJMATHI-74" d="M26 385Q19 392 19 395Q19 399 22 411T27 425Q29 430 36 430T87 431H140L159 511Q162 522 166 540T173 566T179 586T187 603T197 615T211 624T229 626Q247 625 254 615T261 596Q261 589 252 549T232 470L222 433Q222 431 272 431H323Q330 424 330 420Q330 398 317 385H210L174 240Q135 80 135 68Q135 26 162 26Q197 26 230 60T283 144Q285 150 288 151T303 153H307Q322 153 322 145Q322 142 319 133Q314 117 301 95T267 48T216 6T155 -11Q125 -11 98 4T59 56Q57 64 57 83V101L92 241Q127 382 128 383Q128 385 77 385H26Z"></path><path stroke-width="1" id="MJMATHI-65" d="M39 168Q39 225 58 272T107 350T174 402T244 433T307 442H310Q355 442 388 420T421 355Q421 265 310 237Q261 224 176 223Q139 223 138 221Q138 219 132 186T125 128Q125 81 146 54T209 26T302 45T394 111Q403 121 406 121Q410 121 419 112T429 98T420 82T390 55T344 24T281 -1T205 -11Q126 -11 83 42T39 168ZM373 353Q367 405 305 405Q272 405 244 391T199 357T170 316T154 280T149 261Q149 260 169 260Q282 260 327 284T373 353Z"></path><path stroke-width="1" id="MJMATHI-78" d="M52 289Q59 331 106 386T222 442Q257 442 286 424T329 379Q371 442 430 442Q467 442 494 420T522 361Q522 332 508 314T481 292T458 288Q439 288 427 299T415 328Q415 374 465 391Q454 404 425 404Q412 404 406 402Q368 386 350 336Q290 115 290 78Q290 50 306 38T341 26Q378 26 414 59T463 140Q466 150 469 151T485 153H489Q504 153 504 145Q504 144 502 134Q486 77 440 33T333 -11Q263 -11 227 52Q186 -10 133 -10H127Q78 -10 57 16T35 71Q35 103 54 123T99 143Q142 143 142 101Q142 81 130 66T107 46T94 41L91 40Q91 39 97 36T113 29T132 26Q168 26 194 71Q203 87 217 139T245 247T261 313Q266 340 266 352Q266 380 251 392T217 404Q177 404 142 372T93 290Q91 281 88 280T72 278H58Q52 284 52 289Z"></path><path stroke-width="1" id="MJMATHI-6D" d="M21 287Q22 293 24 303T36 341T56 388T88 425T132 442T175 435T205 417T221 395T229 376L231 369Q231 367 232 367L243 378Q303 442 384 442Q401 442 415 440T441 433T460 423T475 411T485 398T493 385T497 373T500 364T502 357L510 367Q573 442 659 442Q713 442 746 415T780 336Q780 285 742 178T704 50Q705 36 709 31T724 26Q752 26 776 56T815 138Q818 149 821 151T837 153Q857 153 857 145Q857 144 853 130Q845 101 831 73T785 17T716 -10Q669 -10 648 17T627 73Q627 92 663 193T700 345Q700 404 656 404H651Q565 404 506 303L499 291L466 157Q433 26 428 16Q415 -11 385 -11Q372 -11 364 -4T353 8T350 18Q350 29 384 161L420 307Q423 322 423 345Q423 404 379 404H374Q288 404 229 303L222 291L189 157Q156 26 151 16Q138 -11 108 -11Q95 -11 87 -5T76 7T74 17Q74 30 112 181Q151 335 151 342Q154 357 154 369Q154 405 129 405Q107 405 92 377T69 316T57 280Q55 278 41 278H27Q21 284 21 287Z"></path><path stroke-width="1" id="MJMATHI-69" d="M184 600Q184 624 203 642T247 661Q265 661 277 649T290 619Q290 596 270 577T226 557Q211 557 198 567T184 600ZM21 287Q21 295 30 318T54 369T98 420T158 442Q197 442 223 419T250 357Q250 340 236 301T196 196T154 83Q149 61 149 51Q149 26 166 26Q175 26 185 29T208 43T235 78T260 137Q263 149 265 151T282 153Q302 153 302 143Q302 135 293 112T268 61T223 11T161 -11Q129 -11 102 10T74 74Q74 91 79 106T122 220Q160 321 166 341T173 380Q173 404 156 404H154Q124 404 99 371T61 287Q60 286 59 284T58 281T56 279T53 278T49 278T41 278H27Q21 284 21 287Z"></path><path stroke-width="1" id="MJMATHI-6E" d="M21 287Q22 293 24 303T36 341T56 388T89 425T135 442Q171 442 195 424T225 390T231 369Q231 367 232 367L243 378Q304 442 382 442Q436 442 469 415T503 336T465 179T427 52Q427 26 444 26Q450 26 453 27Q482 32 505 65T540 145Q542 153 560 153Q580 153 580 145Q580 144 576 130Q568 101 554 73T508 17T439 -10Q392 -10 371 17T350 73Q350 92 386 193T423 345Q423 404 379 404H374Q288 404 229 303L222 291L189 157Q156 26 151 16Q138 -11 108 -11Q95 -11 87 -5T76 7T74 17Q74 30 112 180T152 343Q153 348 153 366Q153 405 129 405Q91 405 66 305Q60 285 60 284Q58 278 41 278H27Q21 284 21 287Z"></path><path stroke-width="1" id="MJMAIN-29" d="M60 749L64 750Q69 750 74 750H86L114 726Q208 641 251 514T294 250Q294 182 284 119T261 12T224 -76T186 -143T145 -194T113 -227T90 -246Q87 -249 86 -250H74Q66 -250 63 -250T58 -247T55 -238Q56 -237 66 -225Q221 -64 221 250T66 725Q56 737 55 738Q55 746 60 749Z"></path></defs></svg>

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