Abstract:To meet the demand for next-generation electronic products with excellent driving ability and high switching speed, using InSnO electrode material as a semiconductor channel layer is one of the attempts to improve the mobility of thin-film transistors (TFTs). However, instabilities in the environment limit the development of high-mobility semiconductors. In this work, an ultrathin hafnium (Hf)-doped InSnO (HITO) layer is prepared with enhanced stability, which is achieved by radio frequency magnetron cosputtering at low temperature. The HITO layer is deposited onto InSnO (ITO) to reduce the oxygen vacancies concentration, and thus, the trapping and detrapping issues at the surface of ITO channel are suppressed, leading to a high mobility of 76.21 cm , a low threshold voltage of −0.86 V, and a steep subthreshold swing (SS) of 0.24 V/decade. The HITO layer is insensitive to water and oxygen and effectively blocks the permeability channel layer. The fabricated HITO/ITO TFTs obtain improved stability in positive bias stress (PBS) tests in humidity condition. The threshold voltage shifts under PBS at 85% relative humidity for 3600 s decreased from −8.2 to 0.97 V. This work provides a feasible method for low-cost, high-mobility oxide TFTs, and the whole process temperature control below 150 °C also expands its application in flexible electronic devices.

InSnO:N homojunction thin-film transistors fabricated at room temperature

P-type Tin–indium Oxide Films Prepared by Thermal Oxidation of Metallic InSn Alloy Films

Junction Properties of Nitrogen-Doped Zno Thin Films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Study of zinc tin oxide thin-film transistor

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Mist CVD deposited amorphous InSnZnO thin films with different nitrogen/oxygen ratios carrier gases and their applications to thin-film transistors

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Study on the Preparation of InN Films under Different Substrates and Nitrogen-Argon Flow Ratios and the Effect of Operating Temperature on Carrier Transport in P-Nio/n-inn Heterojunctions

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures