Abstract:Amorphous SiC thin films on a silicon substrate (Si) with different film thicknesses (about 20–450 nm) were deposited using dual ion beam sputtering deposition (DIBSD) at room temperature. These SiC thin films were of high quality showing high coverage (>90%) and low surface and interface roughness (<5 Å). The structure and morphology of these SiC/Si systems were explored by x-ray reflectivity, x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The bonding configuration and compositional details of the SiC films were examined by Fourier-transform infrared and Raman spectroscopy. The optical constants (complex dielectric function and refractive index) and the bandgap of SiC thin films were analyzed through spectroscopic ellipsometry in the 0.55–6.3 eV energy range. An increase in the bandgap (5.15–5.59 eV) and a corresponding decrease in the refractive index (2.97–2.77) were noticed with the increase of SiC film thickness from about 20–450 nm. This thickness dependent trend in optical properties is attributed to the increase of the C to Si atomic concentration ratio in DIBSD grown SiC thin films with increasing film thickness, as observed from energy dispersive x-ray analysis measurements. The unique properties of amorphous SiC have already placed it as a suitable candidate for solar cells and photovoltaic applications in its thin film form. The results developed in this study for thickness dependent optical properties of SiC thin films can be used for further optimizing the performance of SiC in various applications through tuning of optical properties.

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Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

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Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

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Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

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