Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

An elastic model for the In-In correlations in In(x)Ga(1-x)As semiconductor alloys

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Modification of Projected Velocity Power Spectra by Density Inhomogeneities in Compressible Supersonic Turbulence

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Correlations and Ordering in (gasb)1−xge2x Alloys

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Derivation of a Continuum Model for Epitaxial Growth with Elasticity on Vicinal Surface.

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Atomistic Modeling of Strain Distribution in Self-Assembled Interfacial Misfit Dislocation (IMF) Arrays in Highly Mismatched III–V Semiconductor Materials

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Influence of Indium Composition on the Surface Morphology of Self-Organized Inxga1-Xas Quantum Dots on Gaas Substrates

Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices