Optimization of the substrate temperature of narrow bandgap CIS solar cells by three stage coevaporation process
Tongqing Qi,Chenchen Zhao,Yanan Liu,Xuhui Liu,Xue Zheng,De Ning,Ming Ma,Ye Feng,Ming Chen,Wenjie Li,Junyi Zhu,Jie Zhang,Chunlei Yang,Weimin Li
DOI: https://doi.org/10.1016/j.mssp.2022.106879
IF: 4.1
2022-10-01
Materials Science in Semiconductor Processing
Abstract:In this paper, three-stage co-evaporation method was used to prepare narrow bandgap CuInSe2 (CIS) thin-film absorber. The effect of the substrate temperature on the performance of CIS solar cells was investigated. The substrate temperatures of the CIS films varied from 420 °C to 580 °C. The microstructure structure, crystallinity, morphology, and optoelectrical performances of the CIS solar cell were investigated by various characterization methods. We found that the substrate temperature played a great role in the properties of the CIS thin films and solar cell devices: that was the CIS solar cell deposited at low temperature showed poor crystallinity, fine grain size and low efficiency, while CIS solar cell deposited very high temperature also showed high efficiency. However, high substrate temperature can lead to the Indium loss at the surface of the CIS films, although the bulk composition of CIS films did vary much at different substrate, resulting in FF (fill factor) reduce.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied