Abstract:Conventional p–n junction solar cells exhibit good thermal stability but poor carrier selectivity. The main aim of this study was to achieve improved passivation along with carrier-selective contact for a solar cell having a tunnel oxide passivated contact (TOPCon) structure. To this end, we attempted to optimize the polysilicon (poly-Si) layer deposited on an ultrathin (~1.3 nm) SiO2 tunnel oxide layer to achieve high carrier lifetime and low recombination. We observed the passivation properties under varied thicknesses of the poly-Si layer and the phosphine (PH3) gas flow rate at three different annealing temperatures. Our experimental approach was able to achieve the best passivation properties by use of a moderately thin poly-Si layer. The poly-Si layer thickness was varied from 55 to 113 nm, and the PH3 flow rate was varied from 10 to 80 sccm at three different annealing temperatures in the range of 800–950 °C. The 113-nm-thick poly-Si layer was able to yield an implied open-circuit voltage (i-VOC) of 733 mV along with a very low recombination current density (J0) of 5.2 fA/cm2 at a PH3 flow rate of 40 sccm and post-deposition annealing temperature of 900 °C. A higher annealing temperature resulted in damage to the substrate, which in turn led to poor passivation; hence, optimization of this temperature was necessary. The passivation properties were further improved via the deposition of a thin (10-nm thick) Al2O3 layer on one side (i.e., front side) of the symmetric cell structure. This deposition caused a decrease in J0 to 2.5 fA/cm2 and an increase in i-VOC to 742 mV. These results are attributed to a decrease in the number of interfacial defects, promoted formation of a carrier collector layer, and good field-effect passivation. We performed a simulation study for the realization of a TOPCon solar cell and employed therein the experimentally determined parameters, which yielded highly promising cell results. Our proposed simple and cost-effective approach has high potential for future large-scale production of high-efficiency TOPCon solar cells.

Morphological, Optical and Electrical Analysis of Ag Polymer-Nickel Low Temperature Top Electrode in Silicon Solar Cell for Tandem Application

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Implementation of nickel and copper as cost‐effective alternative contacts in silicon solar cells

Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells

Nickel Electroless Plating: Adhesion Analysis for Mono-Type Crystalline Silicon Solar Cells

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells

Advancing nickel seed layer electroplating for enhanced contact and passivation performance in TOPCon solar cells

Copper–Nickel Alloy Plating to Improve the Contact Resistivity of Metal Grid on Silicon Heterojunction Solar Cells

Enhancement of NiOx/poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

Enhancing poly-Si contact through a highly conductive and ultra-thin TiN layer for high-efficiency passivating contact silicon solar cells

Mechanical and Electrical Properties of Ni-Ag Metallized TOPCon Silicon Solar Cells Structured by Green Picosecond Laser

Impedance analysis of charge transfer upon nickel doping in Tio2-based flexible dye-sensitized solar cell

Analysis of passivation property using thin Al2O3 layer and simulation for realization of high-efficiency TOPCon cell

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Uniform Silver Nanowire Patterned Electrode on Robust PEN Substrate Using Poly(2-hydroxyethyl methacrylate) Underlayer

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Insight into the Contact Mechanism of Ag/Al–Si Interface for the Front‐Side Metallization of TOPCon Silicon Solar Cells

Ohimc Contact Formation Mechanism of Silver–Aluminum Paste Metallization on the p+ Emitter of n-Type Crystalline Silicon Solar Cells