Abstract:Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still a concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this article, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the module. A double-side cooled half-bridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized. By using the sintered-Ag instead of solid copper interposers, our simulation results showed that, at a total power loss of 200 W, the thermomechanical stress at the most vulnerable interfaces (interposer-attach layer) was reduced by 42% and in the SiC MOSFET by 50% with a tradeoff of only 3.6% increase in junction temperature. The sintered-Ag interposers were readily fabricated into the desired dimensions without postmachining and did not require any surface finishing for die bonding and substrate interconnection by silver sintering. The porous interposers were also deformable under a low force or pressure, which helped to accommodate chip thickness and/or substrate-to-substrate gap variations in the planar module structure, thus simplifying module fabrication. The experimental results on the electrical performance of the fabricated SiC modules validated the success of using the porous silver interposers for fabricating planar, double-side cooled power modules.

Design and Evaluation of a Face-Down Embedded SiC Power Module With Low Parasitic Inductance and Low Thermal Resistance

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

A SiC Double-Sided Stacked Wire-Bondless Power Module for High-Frequency Power Electronic Applications

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

Design of a High-power Density Power Module with Large-area (10 Mm × 10 Mm) SiC MOSFETs for Traction Inverter Application

Compact Sandwiched Press-Pack SiC Power Module With Low Stray Inductance and Balanced Thermal Stress

Design and evaluation of press-pack SiC MOSFET

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Design, Packaging and Evaluation of an All-SiC-Based Four-Level ANPC Power Module

Multichip Parallel Double-Sided Cooling Silicon Carbide Power Module With Low Parasitic Inductance and Balanced Dynamic Current

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters

Design of Low Parasitic Inductance Three-level T-type SiC-MOS/Si-IGBT Module

Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction

Design and Evaluation of a SiC and Si IGBT Hybrid Three-Level ANPC Power Module

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs

1700 V full-SiC half-bridge power module with low switching loss