Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction
Ying Wang,Xi Jiang,Song Yuan,Nianlong Ma,Runze Ouyang,Daoyong Jia,Xiaowu Gong,Zhenjiang Pang,Lei Wen,Haimin Hong,Hao Niu
DOI: https://doi.org/10.1109/ted.2024.3433319
IF: 3.1
2024-08-28
IEEE Transactions on Electron Devices
Abstract:In this article, an innovative layout is introduced to reduce the stray inductance of the multichip power modules (MCPMs) through reverse coupling of current in parallel power loops, which effectively cancels out mutual inductance. A half-bridge silicon carbide (SiC) MOSFET power module was designed based on this novel layout. The fabricated SiC power module was experimentally validated, demonstrating a measured stray inductance of about 3.5 nH. Experimental results confirmed that the proposed module outperforms counterpart commercial SiC MOSFET power modules in terms of turn-off overshoot voltage and switching loss reduction, highlighting the advantage of the reverse-coupling current approach in enhancing power module performance. The principle of enhancing negative mutual inductance and dynamic current sharing in circuits through the reverse coupling parallel loops is discussed.
engineering, electrical & electronic,physics, applied