Abstract:This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis towards EOT ∼1 nm as dictated by semiconductor technology roadmaps for future beyond‐Si CMOS nodes. 2D layered semiconductors have attracted considerable attention for beyond‐Si complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared into ultrathin channel materials toward ultrascaled device architectures, including double‐gate field‐effect‐transistors (DGFETs). This work presents an experimental analysis of DGFETs constructed from chemical vapor deposition (CVD)‐grown monolayer (1L) molybdenum disulfide (MoS2) with atomic layer deposition (ALD) of hafnium oxide (HfO2) high‐k gate dielectrics (top and bottom). This extends beyond previous studies of DGFETs based mostly on exfoliated (few‐nm thick) MoS2 flakes, and advances toward large‐area wafer‐scale processing. Here, significant improvements in performance are obtained with DGFETs (i.e., improvements in ON/OFF ratio, ON‐state current, sub‐threshold swing, etc.) compared to single top‐gate FETs. In addition to multi‐gate device architectures (e.g., DGFETs), the scaling of the equivalent oxide thickness (EOT) is crucial toward improved electrostatics required for next‐generation transistors. However, the impact of EOT scaling on the characteristics of CVD‐grown MoS2 DGFETs remains largely unexplored. Thus, this work studies the impact of EOT scaling on subthreshold swing (SS) and gate hysteresis using current–voltage (I–V) measurements with varying sweep rates. The experimental analysis and results elucidate the basic mechanisms responsible for improvements in CVD‐grown 1L‐MoS2 DGFETs compared to standard top‐gate FETs.

Simulation of Molybdenum Disulfide based MOSFET Device using COMSOL Multiphysics software

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Comparative simulation study on MoS2 FET and CMOS transistor

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors

Electrical and Electronic Properties of Magnesium/Molybdenum Disulfide Heterojunction Field Effect Transistors: A Theoretical Study

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials