Abstract:This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis towards EOT ∼1 nm as dictated by semiconductor technology roadmaps for future beyond‐Si CMOS nodes. 2D layered semiconductors have attracted considerable attention for beyond‐Si complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared into ultrathin channel materials toward ultrascaled device architectures, including double‐gate field‐effect‐transistors (DGFETs). This work presents an experimental analysis of DGFETs constructed from chemical vapor deposition (CVD)‐grown monolayer (1L) molybdenum disulfide (MoS2) with atomic layer deposition (ALD) of hafnium oxide (HfO2) high‐k gate dielectrics (top and bottom). This extends beyond previous studies of DGFETs based mostly on exfoliated (few‐nm thick) MoS2 flakes, and advances toward large‐area wafer‐scale processing. Here, significant improvements in performance are obtained with DGFETs (i.e., improvements in ON/OFF ratio, ON‐state current, sub‐threshold swing, etc.) compared to single top‐gate FETs. In addition to multi‐gate device architectures (e.g., DGFETs), the scaling of the equivalent oxide thickness (EOT) is crucial toward improved electrostatics required for next‐generation transistors. However, the impact of EOT scaling on the characteristics of CVD‐grown MoS2 DGFETs remains largely unexplored. Thus, this work studies the impact of EOT scaling on subthreshold swing (SS) and gate hysteresis using current–voltage (I–V) measurements with varying sweep rates. The experimental analysis and results elucidate the basic mechanisms responsible for improvements in CVD‐grown 1L‐MoS2 DGFETs compared to standard top‐gate FETs.

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Low Frequency Noise Characteristics In P-Type Mosfet With Multilayer Wse2 Channel And Al2o3 Back Gate Dielectric

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications

Improved Low-Frequency Noise in CVD Bilayer MoS2 Field-Effect Transistors

Low frequency noise characteristics in p-Type MOSFET with multilayer WSe<inf>2</inf> channel and Al<inf>2</inf>O<inf>3</inf> back gate dielectric

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Tunable Low-Frequency Noise in Dual-Gate MoS 2 Transistors

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance

Performance Evaluation and Optimization of Single Layer MoS2Double Gate Transistors with Schottky Barrier Contacts

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Remote Phonon And Impurity Screening Effect Of Substrate And Gate Dielectric On Electron Dynamics In Single Layer Mos2

TCAD performance analysis of a symmetrical double gate non-aligned junction FET device with high and low dielectric gate oxide in sub-100 nm regime

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Simulation of Molybdenum Disulfide based MOSFET Device using COMSOL Multiphysics software