Abstract:In order to realize the promising potential of MoS2 as the alternative channel material, it is essential to achieve high-performance top-gated MoS2 field-effect transistors (FETs), especially since the back-gated counterparts cannot control the device individually. Although uniform high-k dielectric films, such as HfO2, can be obtained through the introduction of artificial nucleation sites on the MoS2 channel to fabricate top-gated FETs, this would inevitably degrade their channel/dielectric interface quality, induce significant charged impurity scattering and lower carrier mobility. In this work, MoS2 FETs are fabricated using a self-aligned nanowire top-gate, which can effectively reduce the charged impurity scattering on the surface of MoS2. Specifically, the fabricated short-channel devices exhibit impressive electrical performances, such as the high on/off current ratio, low interface trap density, and near-ideal subthreshold slope at room temperature. In addition, the short channel effect is systematically analyzed, which indicates that the phonon scattering can be the dominant scattering mechanism in the devices when the amount of charged impurities is effectively reduced with the self-aligned nanowire gate. All these provide an enhanced fabrication scheme to attain top-gated short-channel devices with the optimized interface and potentially to explore their corresponding performance limits.

Tunable Low-Frequency Noise in Dual-Gate MoS 2 Transistors

Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors

Improved Low-Frequency Noise in CVD Bilayer MoS2 Field-Effect Transistors

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Performance Potential and Limit of MoS2 Transistors

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Performance Limits Of The Self-Aligned Nanowire Top-Gated Mos2 Transistors

Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors

86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection

A Comparative Study on Top-Gated and Bottom-Gated Multilayer MoS2 Transistors with Gate Stacked Dielectric of Al2O3/HfO2.

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region

Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

High-current MoS2 Transistors with Non-Planar Gate Configuration.

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Effect of Dielectric Interface on the Performance of MoS2 Transistors.