Abstract:The residual stress distribution induced by nanosecond UV laser irradiation on the surface of SiC single crystal was detected through X-ray stress measurement method in this manuscript. In order to explain the generation mechanism of the residual stresses, the surface morphology of the laser ablation zone was characterized by laser scanning confocal microscopy. Besides, the material compositions of the ablation zone were also observed by using energy dispersive X-ray spectrometer. The measurement results indicated that tensile stress distribution existed around the laser-irradiated zone, while the center position of the laser spot had the smaller residual stresses. There were obvious bulges at the ablation zone margin, which may be caused by the melting of the material and the splashing and re-solidification of molten material in the ablation hole. In addition, there exists oxidation phenomenon in the irradiated region by comparing the EDS results of laser irradiated and unirradiated regions. This suggested that the temperature reached its melting point and photothermal ablation occurred when laser irradiated on the surface of the silicon carbide specimen. Therefore, it can be concluded that the existence of residual stresses was related to the local thermal expansion caused by laser irradiation. And the residual stresses at the marginal zone had the larger tensile stresses because of the transverse extrusion effect.

Residual Stress Measurement of Single-Crystal SiC with Different Crystallographic Orientations

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Origins and characterization techniques of stress in SiC crystals: A review

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

X-ray stress measurement of SiC single-crystal induced by laser ablation

Direct Measurement of Residual Stresses and Their Effects on the Microstructure and Mechanical Properties of Heat-Treated Si3N4 Ceramics

Residual stress variation in SiCf/SiC composite during heat treatment and its effects on mechanical behavior

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Study on the Residual Stress of Silicon Carbide Space-borne Mirror

Effects of Interfacial Residual Stress on Mechanical Behavior of SiC F /sic Composites

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

Evaluation on Residual Stresses of Silicon-Doped CVD Diamond Films Using X-ray Diffraction and Raman Spectroscopy

Microscopic residual stress evolution at the SiC/Al interface during nanoindentation via molecular dynamics simulation

The resolution and repeatability of stress measurement by Raman and EBSD in silicon

A GENERAL APPROACH TO THE MEASUREMENT OF THERMAL RESIDUAL STRAINS AND STRESSES IN SiCw/Al COMPOSITES

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

Analysis of the Residual Stress in Al 2 O 3 −sic Nanocomposites

Experimental study of residual stress distribution in interfacial micro-region of SiC f /Ti17 composites via micro-slotting method

Investigation into Cooling-Rate Dependent Residual Stresses in ZrB2–SiC Composites Using Improved Raman Spectroscopy Method

Effects of interfacial residual stress on mechanical behavior of SiCf/SiC composites

Influence of crystallographic effect on tool wear, cutting stress, cutting temperature, cutting force and subsurface damage in nano cutting of single crystal silicon carbide