Abstract:Silicon carbide (SiC) has emerged as a significant wide bandgap semiconducting material, playing a pivotal role in the fabrication of high-frequency, high-power electronic devices in modern times. Its exceptional properties, such as high thermal conductivity, high saturation velocity, and high breakdown field, have positioned it as a valuable constituent in various application fields, including transportation, communication, and bioelectronics. However, the efficacy and long-term reliability of SiC-based devices are critically dependent on the quality of both the SiC substrate and epitaxial material employed. The presence of deleterious defects within these materials can induce device degradation and failure, posing a significant challenge in realizing the full potential of the device. Therefore, it is imperative to address the quality while maintaining the availability of large-scale single crystals of SiC to further expand the development of SiC-based device technology. Among various kinds of crystallographic defects in bulk crystal, low angle grain boundary (LAGB) is a commonly observed planar defect that prevents the implementation of large size (≥ 1 cm 2 ) SiC devices [1]. In both 6H and 4H-SiC, LAGBs have been observed to replicate during the epitaxial growth [2], which can lead to profound impact on the physical and electronic properties of the crystal that subsequently triggers device degradation. Literature reveals that the presence of LAGBs in commercial wafers can lead to increased leakage currents during reverse-bias operation of devices [3]. Besides, the existence of prismatic tilt boundaries is usually accompanied with aggregation of edge type basal plane dislocations (BPDs) [4], which cause severe degradation in SiC bipolar devices [5] as BPD segments can dissociate into partials and form stacking faults in between [6]. This study investigated a unique distribution pattern of LAGBs observed on physical vapor transport (PVT) grown off-axis 4H-SiC wafers. Synchrotron X-ray topographs in both transmission and grazing geometry reveal that three sets of LAGBs are presented on one side of the wafer, away from the facet position, each set contains numerous LAGB arrays. Figure 1 (a) shows a schematic diagram where each oval outlines the approximate location of each LAGB set. As the grazing-incidence topographs shown in Figure 1 (b), the LAGB sets distributed at the upper and lower region of the wafer consist of white contrast threading edge dislocations (TEDs) extending from the inner area towards the edge approximately along 60o and 120o direction, respectively. The LAGB set positioned at the middle region of the wafer consists of dark contrast TEDs extending from the inner area towards the edge approximately along 90o direction. All individual TED arrays in each LAGB set extends along the directions, with identical Burgers vectors perpendicular to the array direction. The white and dark contrast of TEDs corresponds to tilt in opposite directions. White contrast TEDs are with Burgers vectors of 1/3[2-1-10] and 1/3[1-210], dark contrast TEDs are with Burgers vectors of 1/3[-2110] and 1/3[-12-10]. Such TED LAGBs are identified as pure tilt boundaries that accommodate the rotational misorientation between two adjacent regions. Therefore, a flat wafer is expected to exhibit zero net misorientation due to these TED arrays. However, any non-zero net misorientation resulting from these arrays is likely to promote instability, ultimately leading to the curvature of the plane. A systematic analysis is being carried out across several wafers and this relationship between the distribution of TED arrays and lattice curvature will be discussed. Reference: [1] N. Ohtani et al. Journal of Crystal Growth 237–239 , 1180–1186, (2002). [2] C. Hallin et al, J. Cryst. Growth 181 , 241 (1997). [3] R. Singh and M. Pecht, IEEE Industrial Electronics Magazine , 2 , 19-31, (2008). [4] Y Chen et al, Materials Science Forum 556 , 231-234 (2007). [5] T. Kimoto, et al., Proc. IEEE Int. Rel. Phys. Symp. , 2A-1.1–2A-1.7, (2017). [6] M. Dudley, et al, Materials Science Forum , 600-603 , 261-266 (2008). Figure 1

Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Influence of Defects in SiC (0001) on Epitaxial Graphene

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigating the Distribution Pattern of Threading Edge Dislocation Low Angle Grain Boundaries in 4H-SiC Wafers Using Synchrotron X-Ray Topography

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Defects in epitaxial 4H-SiC revealed by exciton recombination

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films