Abstract:Co-condensation of mixed SiGe nanoclusters and impingement of SiGe nanoclusters on a Si substrate were applied using molecular dynamics (MD) simulation in this study to mimic the fast epitaxial growth of SiGe/Si heterostructures under mesoplasma chemical vapor deposition (CVD) conditions. The condensation dynamics and properties of the SiGe nanoclusters during the simulations were investigated first, and then the impingement of transient SiGe nanoclusters on both Si smooth and trench substrate surfaces under varying conditions was studied theoretically. The results show that the mixed nanoclusters as precursors demonstrate potential for enhancing epitaxial SiGe film growth at a high growth rate, owing to their loosely bound atomic structures and high mobility on the substrate surface. By varying cluster sizes and substrate temperatures, this study also reveals that smaller clusters and higher substrate temperatures contribute to faster structural ordering and smoother surface morphologies. Furthermore, the formed layers display a consistent SiGe composition, closely aligning with nominal values, and the cluster-assisted deposition method achieves the epitaxial bridging of heterostructures during cluster impingement, highlighting its additional distinctive characteristics. The implications of this work make it clear that the mechanism of fast alloyed epitaxial film growth by cluster-assisted mesoplasma CVD is critical for extending it as a versatile platform for synthesizing various epitaxial films.

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Pt interlayer effects on Ni germanosilicide formation and contact properties

Amorphization Implant Technology in NiSi SALICIDE Process

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Conformal Ni-Silicide Formation over Three-Dimensional Device Structures

Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer