Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

Heat exchanges and columnar growth in electron‐beam evaporation of silicon films for solar cell applications

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Chemical Vapor Deposition Of Silicon In A Lamp-Heated Reactor - Effects Of Heat Absorption, Emission, And Conduction

High-vacuum Electron-Beam Co-Evaporation of Si Nanocrystals Embedded in Al2O3 Matrix

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Electrical and optical properties of amorphous silicon carbide thin films prepared by e-beam evaporation at room temperature

Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

Molecular-Dynamics Simulation of Low-Temperature Growth of Silicon Films by Cluster Deposition

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Electron-Beam Defined Delamination and Ablation of Carbon-Diamond Thin-Films on Silicon

Electron Beam Evaporated Cadmium Sulphide Thin Films for Solar Cell Applications

Deposition and Characterization of High-Efficiency Silicon Thin-Film Solar Cells by HF-PECVD and OES Technology

Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Growth and Characterization of CdS Polycrystalline Films by Electron Beam Evaporation

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Characterizations of Evaporated Α-Si Thin Films for MEMS Application

Silicon epitaxy grown by electron‐beam evaporation in ultrahigh vacuum at 200 °C

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

The Synthesization of Si Nanocrystals Embedded in HfO2 Matrix by Electron Beam Co-Evaporation Technique