Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering
Zhi-Qiang Shi,Huiping Li,Cheng-Long Xue,Qian-Qian Yuan,Yang-Yang Lv,Yong-Jie Xu,Zhen-Yu Jia,Libo Gao,Yanbin Chen,Wenguang Zhu,Shao-Chun Li
DOI: https://doi.org/10.1021/acs.nanolett.0c03704
IF: 10.8
2020-10-16
Nano Letters
Abstract:The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and, thus, their further technological applications. For instance, the freestanding Sb monolayer in the puckered honeycomb phase (α-antimonene), the structural analogue of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the <i>T</i><sub>d</sub>-WTe<sub>2</sub> substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and, thus, the electron band of the epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ∼170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor–semimetal crossover is observed in the bilayer α-antimonene. This study paves the way toward modifying the electron structure in two-dimensional vdW materials through interface engineering.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03704?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03704</a>.Scanning electron microscopy data of Sb/SnSe monolayers; Raman spectra of Sb/SnSe and Sb/MoTe<sub>2</sub> monolayers; DFT calculated band structures of the α-antimonene monolayer, bilayer and trilayer (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03704/suppl_file/nl0c03704_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology