Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

The Growth of Monocrystalline Silicon Thin Film on Insulator (SOI) by Scanning Electron Beam

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Real Time and Ex Situ Spectroscopic Ellipsometry Analysis Microcrystalline Silicon Thin Films Growth

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Epitaxial Growth of YBa2Cu3O7/CeO2/YSZ Thin Films on Silicon-on-insulator Substrates

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering

Characterization of GaAs Thin Films Grown by Molecular Beam Epitaxy on Si-on-insulator

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Epitaxial Growth of Monoclinic and Cubic ZrO2 on Si(100) Without Prior Removal of the Native SiO2

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams