Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

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Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Modulating Epitaxial Atomic Structure of Antimonene Through Interface Design.

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Phase-Dependent Epitaxy for Antimonene Growth on Silver Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

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Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

Epitaxial growth of highly strained antimonene on Ag (111)

Epitaxial Growth of Flat Antimonene Monolayer: A New Honeycomb Analogue of Graphene

Large‐Scale Synthesis of Strain‐Tunable Semiconducting Antimonene on Copper Oxide

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Epitaxy of Antimonene Thin Films with Screw Dislocations for the Application of Saturable Absorbers

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Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering

Surface Step Edge-Assisted Monolayer Epitaxy of Α-Antimonene on SnSe2 Substrate

Halogenated Antimonene: One‐Step Synthesis, Structural Simulation, Tunable Electronic and Photoresponse Property

Van der Waals Heteroepitaxial Growth of Monolayer Sb in a Puckered Honeycomb Structure

Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process