Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Evolution of secondary defects in arsenic implanted Si

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Study of point defect detectors in Si

Al-implantation induced damage in 4H-SiC

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon