(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices
Luke Yates,Andrew T. Binder,Anthony Rice,Andrew M. Armstrong,Jeffrey Steinfeldt,Vincent M. Abate,Michael L. Smith,Brian D. Rummel,Caleb E. Glaser,Andrew A. Allerman,Mary H. Crawford,Brendan P. Gunning,Ozgur Aktas,Travis J. Anderson,Karl D. Hobart,Andrew Koehler,Alan G. Jacobs,James C Gallagher,Nadeemullah Mahadik,Marko Tadjer,Mona Ebrish,Bhawani Shankar,Ke Zeng,Srabanti Chowdhury,James A. Cooper,Robert J. Kaplar
DOI: https://doi.org/10.1149/ma2023-02351682mtgabs
2023-12-22
ECS Meeting Abstracts
Abstract:Vertical gallium nitride (GaN) power devices continue to garner interest in multiple power conversion applications requiring a medium-voltage (1.2 – 20 kV) capability. Currently, silicon carbide (SiC) is addressing this voltage range, however, with a comparable critical electric field and superior mobility, GaN is expected to offer advantages in applications where fast switching and avalanche breakdown response times are desired. While uses in electric vehicles, solid-state transformers, and renewable energy conversion are being actively explored, the potential of a vertical GaN device for electric grid protection in the form of an electromagnetic pulse arrestor is a unique proposition that requires very fast transient capabilities (100x) reduction in leakage current under reverse-bias conditions. This process has resulted in 1.2-kV-class devices with up to 18 A forward current for a 1 mm 2 device with a specific on-resistance of 1.2 mOhm-cm 2 . The foundry effort has since been extended to 3.3-kV-class devices that utilize 25 μm thick drift layers with ~2-4×10 15 cm -3 doping. These devices have demonstrated up to 3.8 kV breakdown with leakage currents 20,000 devices. Statistical variations in I-V and C-V characteristics will be discussed. Packaging process development and analysis are underway to develop electrical stress procedures and identify fundamental failure mechanisms. Finally, a pulse arrested spark discharge (PASD) setup, capable of up to 15 kV pulsed operation in 100 V steps, was implemented to quantify the time response of avalanche breakdown. Initial results on a packaged 800 V device showed a ~1 ns response time during breakdown, which reinforces the potential EMP grid protection applicability. This work was supported by the ARPA-E OPEN+ Kilovolt Devices Cohort directed by Dr.Isik Kizilyalli. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy of the United States Government.