Abstract:Recently, the technology node shrunk below 7 nm and beyond; cobalt (Co) and its low resistivity, superior adhesion property, and excellent electro-migration performance pledge to transform the integrated circuits’ landscape in several areas, especially in interconnects and logic contacts. The present work proposes a weakly alkaline polishing slurry for Co interconnects, mainly consisting of colloidal silica, hydrogen peroxide, glycine, and 1,2,4-triazole at pH 8.1. The feature of tunable high material removal rate (greater than 1000–2000 Å/min) and fitting removal selectivity ( 160) between Co and oxide dielectric could be realized by a moderately variable concentration of glycine complexing agent. Moreover, several analytical techniques, including electrochemical analysis, X-ray photoelectron spectroscopy survey, and adsorption isotherm characterization, were used to understand the interaction mechanism during Co material removal process. The results reveal that 1,2,4-triazole could adsorb on the Co oxide layers via physisorption, achieving an inhibition effect to avoid Co excessive corrosion. Furthermore, the oxidization of hydrogen peroxide, the complexation of glycine zwitterions, and the abrasive mechanical action are critical to maintaining the appropriate material removal rate. Based on the results with research-level wafers, the optimized Co bulk slurry was ultimately applied to the production-level of Co and oxide dielectric wafers. The residual particle, haze condition, and surface profile after polishing have been researched simultaneously.

Cu Electrochemical Polishing for RDL Process of FOWLP and Effects of Cu Overburden Profiles

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN As Barrier/Liner Layer

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Study of Cu Electrochemical Polishing Mechanism With Observation of Water Acceptor Diffusion

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Chemical processes in the chemical mechanical polishing of copper

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

Material Removal and Surface Modification of Copper under Ultrasonic-Assisted Electrochemical Polishing

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

Copper chemical mechanical polishing using a slurry-free technique

Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

Chemical mechanical polishing: Theory and experiment

An Efficient Electrochemical Polishing Method with Planarization Ability Employing Solid and Liquid Electrolytes

Research on the damages of integrated circuit (IC) chip induced by wiring pattern in planarization

Effect of Potassium Ferrocyanide on CMP Performance of Ruthenium in H 2 O 2 -based Slurries

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing