Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Research on the damages of integrated circuit (IC) chip induced by wiring pattern in planarization

Analysis on Pad Effects in Chemical Mechanical Polishing

Chemical mechanical polishing: Theory and experiment

Grinding and Lapping Induced Surface Integrity of Silicon Wafers and its Effect on Chemical Mechanical Polishing

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Stress Analysis of Cu/low-k Interconnect Structure During Whole Cu-CMP Process Using Finite Element Method.

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Review on modeling and application of chemical mechanical polishing

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Comparison of Polishing Pad Characteristics in Copper-interconnect Chemical Mechanical Polishing of 300 Mm Wafer

Chemical processes in the chemical mechanical polishing of copper

Optimized chemical mechanical polishing of Parylene C for high-density wiring in flexible electronics

Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Investigation of thermal effects in copper chemical mechanical polishing

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN As Barrier/Liner Layer

Wear phenomena in chemical mechanical polishing

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Contribution of Porous Pad to Chemical Mechanical Polishing