Abstract:We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank-van der Merwe to Stranski-Krastanov, resulting in the formation of three-dimensional (3D) InAs islands on the surface. Furthermore, exposing static InAs 2D layers to Bi induces a rearrangement of the strained layer into 3D islands. We explore the effect of varying the InAs thickness and Bi flux for these two growth approaches, observing a critical thickness for 3D island formation in both cases. Characterization of (110) InAs quantum dots with high-resolution transmission electron microscopy reveals that larger islands grown by the Stranski-Krastanov mode are plastically relaxed, while small islands grown by the on-demand approach are coherent. Strain relaxation along the [1-10] direction is achieved by 90 degree pure-edge dislocations with dislocation lines running along [001]. In contrast, strain relief along [001] is by 60 degree misfit dislocations. This behaviour is consistent with observations of planar (In,Ga)As/GaAs(110) layers. These results illustrate how surfactant Bi can provoke and control quantum dot formation where it normally does not occur.

Shape transition of InAs quantum dots by growth at high temperature

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Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

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Self‐assembled M ‐plane InGaN Quantum Dots: Formation and Shape Evolution

Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Temperature behavior of excitation emission in self-organized InAs quantum dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix