Growth kinetics effects on self-assembled InAs/InP quantum dots

Bhavtosh Bansal,M. R. Gokhale,Arnab Bhattacharya,B. M. Arora

DOI: https://doi.org/10.1063/1.2128486

2005-06-24

Abstract:A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a comparatively higher growth rate and low growth temperature, the quantum dot density, their average size and hence the peak emission wavelength can be tuned by changing efficiency of the surface diffusion (determined by the growth temperature) relative to the growth flux. We further observe that the distribution of quantum dot heights, for samples grown under varying conditions, if normalized to the mean height, can be nearly collapsed onto a single Gaussian curve.

Materials Science

What problem does this paper attempt to address?

The main purpose of this paper is to study the morphology and optical emission characteristics of InAs/InP quantum dots grown by Metal-Organic Chemical Vapor Deposition (MOVPE) under different growth kinetic parameters. Specifically, the paper attempts to address the following issues:

1. **Impact of growth kinetic parameters on quantum dot characteristics**: By altering growth rate and growth temperature, the study investigates their effects on quantum dot density, average size, and emission wavelength. The paper finds that under non-equilibrium conditions, the density and average size of quantum dots can be adjusted by modulating surface diffusion efficiency.

2. **Normalized analysis of quantum dot height distribution**: The paper further observes that for samples prepared under different growth conditions, if the quantum dot height distribution is normalized to the average height, it can approximately collapse to a single Gaussian curve. This indicates a proportional relationship between the height dispersion of quantum dots and the average height.

3. **Effect of growth conditions on bimodal distribution of quantum dots**: Under lower coverage, the study examines the impact of growth rate and growth temperature on the distribution mode of quantum dots. The paper points out that under certain growth conditions, the quantum dot distribution exhibits bimodal characteristics, and this bimodal phenomenon can be suppressed by lowering the growth temperature or increasing the growth flux.

Through these studies, the paper aims to demonstrate how, by controlling fundamental growth parameters (such as coverage, growth rate, and growth temperature), one can quantitatively understand and predict the density, average size, and size dispersion of quantum dots under far-from-equilibrium conditions. Additionally, the paper explores the impact of growth conditions on the optical properties of quantum dots and attempts to establish a link between growth kinetic parameters and the heterogeneity of the quantum dot broadband.