Abstract:This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. This growth mode is based on a strain-induced transition from two-dimensional layer-by-layer growth towards three-dimensional island growth. The resulting morphology consists of coherent, size homogene, single-crystalline islands (self-assembled quantum dots) on a thin remaining wetting layer. The samples have been extensively characterized by atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM). The investigated materials systems are InP on GaInP(GaAs), InAs on InP, and GaInP on GaP. Experimentally it has been verified that InP island formation on GaInP(GaAs) is nucleation controlled. The areal island density increases with decreasing deposition temperature and increasing deposition rate. For a constant amount of island material, there is an inverse relationship between island density and size. A post-growth annealing period, in the order of minutes, can make density independent control of island sizes possible. By annealing, the islands decrease in height and show a blueshift in PL emission. Investigations in the materials system InAs/InP have shown that the island formation can be very sensitive to substrates and surface preparation. Detailed investigations of GaInP islands on GaP have shown that these islands have an uncommon shape with faced top islands situated on flat base regions. Energy dispersive X-ray spectroscopy (EDS) has shown that the top islands are In rich (In/Ga=3/2) and that the base regions are slightly Ga rich. Theoretical models for the island formation are presented. These are based on rate equations and have been used to calculate InP/GaInP(GaAs) island densities at varying deposition conditions. Average island sizes in the same materials system have been calculated with a materials balancing model. With this model it is also possible to estimate the deposition conditions that give rise to bimodal island size distributions. (Less)

Self‐assembled M ‐plane InGaN Quantum Dots: Formation and Shape Evolution

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Influence of Indium Composition on the Surface Morphology of Self-Organized Inxga1-Xas Quantum Dots on Gaas Substrates

Self-organization of the InGaAs/GaAs quantum dots superlattice

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

The Influence of Underlying Layer on Morphology of InGaN Quantum Dots Self‐assembled by Metal Organic Vapor Phase Epitaxy

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Effects Of Matrix Layer Composition On The Structural And Optical Properties Of Self-Organized Ingan Quantum Dots

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp