Abstract:The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Influence of Indium Composition on the Surface Morphology of Self-Organized Inxga1-Xas Quantum Dots on Gaas Substrates

Indium Composition Dependence of the Size Uniformity of Ingaas Quantum Dots on (311)B Gaas Grown by Molecular Beam Epitaxy

Lateral Ordered InGaAs Self-Organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

Influence of Substrate Orientation on In0.5ga0.5as/Gaas Quantum Dots Grown by Molecular Beam Epitaxy

Substrate Dependence of Ingaas Quantum Dots Grown by Molecular Beam Epitaxy

Effect of in X Ga 1− X As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Self-Organization of High-Density III–V Quantum Dots on High-Index Substrates

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Self-organization of the InGaAs/GaAs quantum dots superlattice

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Influence of Surface Nano-Patterning on the Placement of InAs Quantum Dots

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate