Abstract:Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation. Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research. However, although Cu‐plated metallisation promises significantly reduced costs, its adoption in Si photovoltaic manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu plating for Si photovoltaics and in particular discusses (1) increased carrier recombination due to Cu, (2) reduced module reliability, and (3) limited availability of cost‐effective processes and equipment for metal plating.

Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Copper metallization of electrodes for silicon heterojunction solar cells: Process, reliability and challenges

Implementation of nickel and copper as cost‐effective alternative contacts in silicon solar cells

Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing

Direct Contact Electroplating Sequence Without Initial Seed Layer for Bifacial TOPCon Solar Cell Metallization

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Copper–Nickel Alloy Plating to Improve the Contact Resistivity of Metal Grid on Silicon Heterojunction Solar Cells

Advancing nickel seed layer electroplating for enhanced contact and passivation performance in TOPCon solar cells

Enhancing Electrical and Physical Contacts of Copper‐Electroplated Silicon Heterojunction Solar Cells Through Chemical Pretreated Seed Layers

Novel interlayer boosting the performance of evaporated Cu2O hole‐selective contacts in Si solar cells

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Dual‐Function Light‐Trapping: Selective Plating Mask of SiOx/SiNx Stacks for Silicon Heterojunction Solar Cells

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Formation of a Low Ohmic Contact Nickel Silicide Layer on Textured Silicon Wafers Using Electroless Nickel Plating

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Process challenges of high-performance silicon heterojunction solar cells with copper electrodes

Progress of plated metallization for industrial bifacial TOPCon silicon solar cells

Formation of a Copper Contact Grid on the Surface of Silicon Heterojunction Solar Cells

The Investigation of Plating Technologies for Front Fingers of C-Si Solar Cells