Abstract:Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation. Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research. However, although Cu‐plated metallisation promises significantly reduced costs, its adoption in Si photovoltaic manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu plating for Si photovoltaics and in particular discusses (1) increased carrier recombination due to Cu, (2) reduced module reliability, and (3) limited availability of cost‐effective processes and equipment for metal plating.

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Copper metallization of electrodes for silicon heterojunction solar cells: Process, reliability and challenges

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts

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Formation of a Low Ohmic Contact Nickel Silicide Layer on Textured Silicon Wafers Using Electroless Nickel Plating

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Nickel Electroless Plating: Adhesion Analysis for Mono-Type Crystalline Silicon Solar Cells

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Review on Metallization Approaches for High-Efficiency Silicon Heterojunction Solar Cells

Fabrication of Metal Grid on Silicon-Based Solar Cell by Electrochemical Deposition and Microcontact Print

Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing

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Zn As the Protective Layer for Cu Electrode in Wafer-Si Solar Cells

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Production Of Low-Cost Silicon Films Via Molten Salt Electrodeposition