Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

2D-PPC: A single-correction multiple-detection method for Through-Silicon-Via Faults

2D Parity Product Code for TSV online fault correction and detection

Fault Detection and Redundancy Design for TSVs in 3D ICs.

On Effective Through-Silicon Via Repair for 3-D-stacked ICs

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Cellular Structure-Based Fault-Tolerance TSV Configuration in 3D-IC

On Effective Tsv Repair For 3d-Stacked Ics

On Effective and Efficient In-Field TSV Repair for Stacked 3D ICs

Clustered Fault Tolerance TSV Planning for 3-D Integrated Circuits.

Yield and Reliability Enhancement for 3D ICs

A TSV Repair Method for Clustered Faults

Adaptive 3D-IC TSV Fault Tolerance Structure Generation

Testing Structure for Detection of Poly Stringer Defects in CMOS ICs

A Symmetric Bridge-Based Pre-Bond TSV Faults Detection Method

Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis

Eliminating Timing Errors Through Collaborative Design to Maximize the Throughput

Dynamic Error Detection for Dependable Cache Coherency in Multicore Architectures

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

Combining Circuit Level and System Level Techniques for Defect-Tolerant Nanoscale Architectures

A New Cellular-Based Redundant TSV Structure for Clustered Faults