Abstract:Degradation mechanisms of 275-nm-band AlxGa1-xN multiple quantum well deep-ultraviolet light-emitting diodes fabricated on a (0001) sapphire substrate were investigated under hard operation conditions with the current of 350 mA and the junction temperature of 105 °C. The optical output power (Po) initially decreased by about 20% within the operating time less than 102 h and then gradually decreased to about 60% by 484 h. For elucidating the causes for the initial and subsequent degradations, complementary electrical, time-resolved photoluminescence (TRPL), and impurity characterizations were carried out making a connection with the energy band profiles. Because the degradation of the wells was less significant than the Po reduction, the initial degradation is attributed essentially to the decrease in carrier injection efficiency (ηinjection), not in internal quantum efficiency of the wells, most likely due to depassivation of initially H-passivated preexisting nonradiative recombination centers (NRCs) in a Mg-doped p-type Al0.85Ga0.15N electron blocking layer. The principal cause for the subsequent Po reduction until 484 h is attributed to further decrease in ηinjection due to the appearance of certain current bypasses in addition to continuous depassivation of the NRCs in p-type AlxGa1-xN layers. According to our database on the species of vacancy-type defects acting as NRCs in GaN and AlN, which have been identified using the combination of positron annihilation and TRPL measurements, vacancy clusters comprised of a cation vacancy (VIII) and nitrogen vacancies (VN), such as VIIIVN2∼4, are the most suspicious origins of the NRCs in Mg-doped p-type AlxGa1-xN layers.

Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Impact of Current Filaments on the Material and Output Characteristics of Gaas Photoconductive Switches

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

Degradation Study of InGaN-based Laser Diodes Grown on Si

Hot-electron Induced Degradations in GaN-based LEDs Fabricated on Nanoscale Epitaxial Lateral Overgrown Layers

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Examining Degradation Mechanisms in Strain-Relaxed AlGaN-Based UV-C Light-Emitting Diodes Using Raman Spectroscopy

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

Carriers Capturing of V-Defect and Its Effect on Leakage Current and Electroluminescence in Ingan-Based Light-Emitting Diodes